金刚石薄膜负偏压形核的边缘效应

王传新; 汪建华; 马志斌; 满卫东; 王升高; 康志成

doi:10.11858/gywlxb.2003.02.012

金刚石薄膜负偏压形核的边缘效应

doi: 10.11858/gywlxb.2003.02.012

1.
中国科学院等离子体物理研究所，安徽合肥 230031；
2.
武汉化工学院微波等离子体化学与新材料重点实验室，湖北武汉 430073

详细信息

通讯作者:
王传新

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出版历程
- 收稿日期: 2002-09-10
- 修回日期: 2002-11-26
- 刊出日期: 2003-06-05

Brim Effect of Negative Bias-Enhanced Nucleation of Diamond Film on Silicon Substrate

1.
Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China;
2.
Department of Material Science and Engineering, Wuhan Institute of Chemical Technology, Wuhan 430073, China

More Information

Corresponding author: WANG Chuan-Xin

摘要

摘要: 在微波等离子体化学气相沉积装置中，研究了金刚石薄膜在Si (100)面上的负偏压形核行为，结果表明，偏压大小对金刚石的形核均匀性有显著影响，而甲烷浓度主要影响形核时间，对金刚石的最大核密度影响不大。在硅片尺寸小于钼支撑架时，形核行为存在明显的边缘效应，即在偏压值低于-150 V时，硅片边缘金刚石核密度急剧降低，远低于硅片中央；在甲烷浓度比较低时，硅片边缘核密度要高于中间。研究表明，造成这种现象的主要原因是硅片下的钼支撑架发射电子所致，过量的原子H对金刚石的形核是不利的。
- MPCVD /
- 形核 /
- 金刚石膜 /
- 边缘效应
Abstract: Diamond nucleation improved by negative bias-enhanced technology on Si (100) substrate has been investigated on a microwave plasma enhanced chemical vapor deposition (MPCVD) apparatus using a gas mixture of methane and hydrogen. The results show that the bias voltage has a significant effect on the uniformity of the nucleation density and the concentration of the methane mainly relevant to the nucleation time. There is an obvious brim effect of the nucleation when the size of the silicon substrate is less than that of the Mo substrate holder. The nucleation density of the side is higher than that of the center on the substrate when the bias voltage is lower than -150 V. The nucleation density of the side decrease significantly with the bias voltage when the bias voltage is lower than -150 V. There are nearly no nuclei on the side of silicon when the bias voltage is -200 V. This effect may be contributed to the electron emission of the diamond on Mo substrate holder. The concentration of the methane has little effect on the nucleation density at a fixed bias voltage. Increasing the methane concentration is useful for decreasing the nucleation time.
- MPCVD /
- nucleation density /
- diamond film /
- brim effect

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参考文献(19)

Zhou Z J, Li G, Yang Z F, et al. The Effect of c-BN Inclusion on the Densification and Microstructure of Fine-Grained Polycrystalline Diamond Compact [J]. Chinese Journal of High Pressure Physics, 2001, 15(3): 229-234. (in Chinese)

周振君, 李工, 杨正方, 等. 掺杂立方氮化硼对金刚石聚晶致密化和显微结构的影响 [J]. 高压物理学报, 2001, 15(3): 229-234.

Deng F M. Graphitization Process of Diamond Surfaces during the Sintering of Diamond Cobalt System under High Pressure and Temperature [J]. Chinese Journal of High Pressure Physics, 2001, 15(3): 235-240. (in Chinese)

邓福铭. 超高压高温烧结中金刚石表面石墨化过程再研究 [J]. 高压物理学报, 2001, 15(3): 235-240.

Wen C, Zhou G, Hao Z Y, et al. Study on the Property of Nanometric Diamond Particles under High Temperature and High Pressure [J]. Chinese Journal of High Pressure Physics, 2000, 14(2): 119-124. (in Chinese)

文潮, 周刚, 郝兆印, 等. 高温高压下纳米金刚石粉的特性研究 [J]. 高压物理学报, 2000, 14(2): 119-124.

Yugo S, Kanai T, Kimura T, et al. Generation of Diamond Nuclei by Electric Field in Plasma Chemical Vapor Deposition [J]. Appl Phys lett, 1991, 58(10): 1036-1038.

Feng B, Liao K J, Wang W L, et al. Effects of Negative Biasing on Diamond Growth on Mo Substrates [J]. Microfabrication Technology, 1998, 4: 65-68. (in Chinese)

冯斌, 廖克俊, 王万录, 等. 负偏压对Mo衬底上生长金刚石膜的影响 [J]. 微细加工技术, 1998, 4: 65-68.

Zhang W J, Sun X S, Peng H Y, et al. Diamond Nucleation Enhancement by Direct Low-Energy Ion-Beam Deposition [J]. Phys Rev B, 2000, 61(8): 5579-5586.

Sheldon B W, Csencsits R, Rankin J, et al. Bias-Enhanced Nucleation of Diamond during Microwave-Assisted Chemical Vapor Deposition [J]. J Appl Phys, 1994, 75(10): 5001-5008.

Stoner B R, Ma G H M, Wolter S D, et al. Characterization of Bias-Enhanced Nucleation of Diamond on Silicon by in Vacuo Surface Analysis and Transmission Electron Microscopy [J]. Phys Rev B, 1992, 45(19): 11067-11084.

Yang G W. Study on Positive Bias Controlled Nucleation of CVD Diamond Thin Films [J]. Vacuum-Vacuum Technology and Material, 1997, 3: 19-22. (in Chinese)

杨国伟. 正偏压控制CVD金刚石薄膜成核的理论研究 [J]. 真空, 1997, 3: 19-22.

Chen Q, Lin Z D. Negative Bias Enhanced Nucleation of Diamond on Si via Hot Filament Chemical Vapor Deposition [J]. Appl Phys Lett, 1996, 68: 2450-2452.

Wang W L, Liao K J, Fang L, et al. Nucleation of Diamond by Biased Hot Filament Chemical Vapor Deposition [J]. Journal of Synthetic Crystals, 1999, 28(1): 65-68. (in Chinese)

王万录, 廖克俊, 方亮, 等. 负衬底偏压热灯丝CVD金刚石膜成核的研究 [J]. 人工晶体学报, 1999, 28(1): 65-68.

Wang Y, Xia Y B, Wang H. Role of Electrons during Microwave Plasma-Assisted Chemical Vapor Deposition of Diamond Thin Film [J]. Journal of Functional Materials and Devices, 1998, 4(3): 182-186. (in Chinese)

王瑜, 夏义本, 王鸿. MPCVD沉积金刚石薄膜时等离子体中电子的作用 [J]. 功能材料与器件学报, 1998, 4(3): 182-186.

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