Pressure Dependence of Crystallization Temperature of a Silica Contained Oxide Ionic Glass
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摘要: 本文应用DTA及X射线衍射法在常压及高压下对一种含SiO2的锂离子导体玻璃0.3Li2O-0.67SiO2-0.03V2O5加热时的晶化行为进行了研究。该氧化物玻璃的晶化过程分两个阶段。在常压下，第一晶化过程发生在560 ℃附近，析出相为Li2O2SiO2。对应的晶化温度Tx1随压力的升高发生了急剧的变化。从常压到0.3 GPa，Tx1从560 ℃升高到620 ℃；继续升压时Tx1突然下降，并在0.4 GPa处跌到528 ℃，呈现一个陡峭的峰值。0.4 GPa以上，Tx1随压力的变化则呈常规行为，比较平稳地，大致线性地升高，一直到最高测定压力2 GPa。 本文最后对这些行为的可能原因进行了讨论。Abstract: The crystallization behavior of amorphous lithium ionic conductor 0.3Li2O-0.67SiO2-0.03V2O5 has been studied under ambient and high pressures. There were two steps for the crystallization of the amorphous material. Li2Si2O5 was formed in the first step at 560 ℃ under ambient pressure while the precipitation of SiO2 occurred in the second one. The temperature of the first crystallization step Tx1 was greatly influenced by pressure. With the increasing pressure, it increased from 560 ℃ at ambient pressure to 620 ℃, the maximum, at 0.3 GPa and then dropped sharply to 528 ℃ at 0.4 GPa. After that Tx1 increased gradually with a rate of 29 ℃/GPa up to 2 GPa, the highest pressure applied. An explanation will also be given.
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