Strain Rate-Dependent Phase Transition Behavior in Silicon
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摘要: 高压相变是凝聚态物理、地球与行星科学、材料科学等领域关注的核心问题之一，而加载应变率是相变动力学过程的重要影响因素。由于动态加载下物质相结构原位诊断技术的不足以及宽广加载应变率下物质高压相变系统实验研究的缺失，难以开展基于原子尺度物理机制的相变动力学过程建模和数值模拟研究。由于硅的高压相极其丰富，且拥有大量亚稳相，动力学因素在其高压相变过程中发挥着至关重要的作用，因此，硅是研究高压相变动力学的理想材料，对普适相变动力学过程的理论建模具有重要意义。以硅为例，介绍其在准静态、中等应变率和高应变率加载下的相变行为，探讨加载应变率对其高压相变行为的影响。Abstract: High pressure phase transition is one of the core concerns in the field of condensed matter physics, Earth and planetary science and material science. And the loading strain rate is an important influencing factor for the kinetics of phase transition. Due to the lack of in situ diagnostics of crystal structure under dynamic loading, and the limited experimental research on the phase transition behavior over a wide range of strain rates, there is no unified physical model to describe how the phase transition dynamics evolve from static compression to high strain rate shock compression. Since the high-pressure phase diagram of silicon is extremely rich and possesses a large number of substable phases, and at the same time, the kinetic factors play a crucial role in the high-pressure phase transition process of silicon, silicon is an ideal material for studying the high-pressure phase transition kinetics, which is of great significance for the theoretical modeling of universal phase-transition kinetic processes. Here, we take silicon as an example and present its phase transition behavior under quasi-static, medium strain rate and high strain rate loading in turn, highlighting the effect of loading strain rate on its high-pressure phase transition behavior.
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图 5 单晶硅在不同加压速率下的时间分辨拉曼光谱
Figure 5. Time-resolved Raman spectra for single crystal silicon at different compression rates
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