极端条件下碳化硅的变形、损伤与破坏研究进展

李旺辉; 奉兰西; 张晓晴; 姚小虎

doi:10.11858/gywlxb.20210783

极端条件下碳化硅的变形、损伤与破坏研究进展

doi: 10.11858/gywlxb.20210783

华南理工大学土木与交通学院，广东广州　510641

基金项目: 国家自然科学基金（11925203，11972163，12002127）；博士后创新人才支持计划（BX20190121）；中央高校基本科研业务费面上项目（2020ZYGXZR022）

详细信息

作者简介:
李旺辉（1989－），男，博士，助理研究员，主要从事材料动态力学行为和极端力学研究. E-mail：liwanghui@scut.edu.cn

通讯作者:
姚小虎（1974－），男，博士，教授，博士生导师，主要从事爆炸与冲击动力学实验、理论和模拟研究. E-mail：yaoxh@scut.edu.cn

中图分类号: O347; O521.2; O369
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出版历程
- 收稿日期: 2021-04-23
- 修回日期: 2021-06-03

Brief Review of Research Progress on the Deformation, Damage and Failure of Silicon Carbide under Extreme Conditions

School of Civil Engineering and Transportation, South China University of Technology, Guangzhou 510641, Guangdong, China

摘要

摘要: 碳化硅作为重要的陶瓷和半导体材料，在国防军工、航空航天等应用领域和高压物质科学等方面具有重要的应用研究和科学价值。本文对动加载下碳化硅的变形、损伤和破坏等物理力学行为和特性研究进行了梳理，分别从实验研究和计算模拟角度概述了碳化硅在不同加载条件和微结构下的变形与破坏行为研究进展，总结归纳了碳化硅材料动态响应相关研究的若干现存问题，并展望了该领域内几个重要的发展方向，以期为相关群体的研究工作提供有益参考。
- 碳化硅 /
- 多尺度 /
- 动加载 /
- 动力学行为
Abstract: As an important ceramic and semiconductor material, silicon carbide has important engineering and scientific value in application fields such as national defense, military, aerospace, and high-pressure material science. This paper summarized the physical and mechanical behaviors, and characteristics of silicon carbide under dynamic loading, such as deformation, damage and failure, providing a research progress in the deformation and failure of silicon carbide under different loading conditions and microstructures from both the experimental studies and computational simulations. Then the paper summarized some existing problems related to the dynamic response of silicon carbide materials, and proposed several important development directions in this field, in order to provide a useful reference for the research of related research groups.
- silicon carbide /
- multiscale /
- dynamic loading /
- dynamic behavior

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图 1 4种不同工艺SiC陶瓷的微结构扫描电镜（SEM）图像^[38]

Figure 1. SEM images of microstructures in four samples with different processing techniques^[38]

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图 2 垂直冲击试验后的SiC试样和裂纹密度评估^[38]

Figure 2. Observations of SiC sample and the evaluation of the crack density after normal impact tests^[38]

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图 3 不同单轴压缩加载速率下SiC-N的强度^[48]

Figure 3. Strength of SiC-N with different uniaxial compression loading rates^[48]

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图 4 动态压缩试验回收SiC碎片的TEM图像，其中可观测位错和局域无定形化^[52]

Figure 4. Dislocations and localized amorphization identified in TEM images of SiC fragments collected in the dynamic test^[52]

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图 5 SiC实验的Hugoniot曲线和冲击波速度-粒子速度关系^[56]

Figure 5. Hugoniot curve of SiC and the relationship between shock wave velocity and particle velocity^[56]

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图 6 基于断裂动力学的脆性材料动态失效和机理转变模型^[59]

Figure 6. Dynamic failure and mechanism transformation model of brittle materials based on fracture dynamics^[59]

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图 7 脆性固体材料在准静态和动态压缩下的动态失效性质^[59]

Figure 7. Dynamic failure properties of brittle solid materials under quasi-static and dynamic compression^[59]

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图 8 冲击下SiC的应力与体积压缩率的关系（a）以及有效流应力与平均应力的关系（b）^[61]

Figure 8. Relationship between the stress of SiC and the volume compression rate under impact (a) and the relationship between the effective flow stress and the mean stress (b)^[61]

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图 9 SiC冲击波速与粒子速度关系和冲击压缩Hugoniot曲线^[63]

Figure 9. Relationship between shock wave velocity and particle velocity of SiC and Hugoniot curve of shock compression^[63]

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图 10 SiC冲击粒子的速度-时程曲线（a）、压力-体积曲线（b）、剪应力曲线（c）和波速-压力曲线（d）^[65]

Figure 10. Velocity-time history (a), pressure-volume curve (b), shear stress curve (c) and wave velocity-stress curve (d) of SiC under impact^[65]

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图 11 平板冲击实验中各类SiC陶瓷材料的层裂强度与冲击压力的关系^[75]

Figure 11. Relationship between spall strength and shock pressure of different types of SiC ceramics in plate impact experiments^[75]

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图 12 激光冲击回收装置^[82]

Figure 12. Laser shock recovery device^[82]

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图 13 回收SiC的TEM/HRTEM图像中显示的无定形带和层错^[82]

Figure 13. Amorphous bands and stacking faults in TEM/HRTEM images of recovered SiC^[82]

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图 14 激光驱动的冲击压缩实验装置^[83]

Figure 14. Laser driven shock compression experimental device^[83]

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图 15 由VISAR系统记录的粒子速度时程曲线^[83]

Figure 15. Time history of particle velocity recorded by VISAR system^[83]

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图 16 SiC的Hugoniot状态曲线^[83]

Figure 16. Hugoniot state curve of silicon carbide^[83]

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图 17 脆性材料的本构模型描述：(a)～(c) JH-1模型，(d)～(f) JHB模型^[101–102]

Figure 17. Description of constitute equation for brittle materials: (a)–(c) JH-1 model，(d)–(f) JHB model^[101–102]

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图 18 钨杆高速侵彻SiC靶板以及SiC和金属薄板的计算结果^[102]

Figure 18. Calculation results of tungsten rod penetrating SiC target and SiC and metal sheet at high speed^[102]

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图 19 Hugoniot状态下不同势函数计算结果与实验结果比较^[125]

Figure 19. Calculated results of different potential functions are compared with the experimental results in Hugoniot state^[125]

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图 20 金刚石纳米颗粒弹丸撞击无定形SiC靶示意图(a)及最大穿透深度与冲击速度函数的关系(b)^[139]

Figure 20. Schematic diagram of diamond nanoparticles impacting amorphous SiC target (a) and the relationship between maximum penetration depth and shock velocity (b)^[139]

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图 21 金刚石弹丸撞击原始无定形SiC和CNT/无定形SiC复合靶示意图： (a) 半径为2.5 nm的球形金刚石弹丸沿z轴反方向冲击目标，(b)～(c) 由弹丸冲击而造成的碳纳米管损伤^[140]

Figure 21. Schematic diagram of diamond projectile impacting original amorphous SiC and CNT/amorphous SiC composite targets: (a) diamond projectile with a radius of 2.5 nm impacting on target along negative z axis; (b)–(c) projectile impact induced damage of CNT^[140]

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图 22 SiC陶瓷超高速冲击过程中的激波演化^[133]

Figure 22. Shock wave evolution during hypervelocity impact of SiC ceramics^[133]

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图 23 冲击碳化硅中位错、脆性裂纹引起的形核和生长： (a) 13.05 ps时位错线上形成的脆性裂纹（白色箭头处）； (b) 闪锌晶型在{110}平面形成的裂纹扩展； (c) 27 ps 时材料裂纹扩展； (d) 31.2 ps时材料后表面开裂^[133]

Figure 23. Nucleation and growth of brittle cracks from dislocations in shocked SiC: (a) white arrows indicate brittle cracks nucleating directly from dislocation lines at 13.05 ps; (b) cracks cleaving {110} planes of the zinc blende crystal in the direction of the back surface; (c) cracked configuration at 27 ps; (d) cracked back surface at 31.2 ps^[133]

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图 24 常温条件下单晶及纳米多晶SiC的冲击Hugoniot曲线^[137]

Figure 24. Hugoniot curves of single and nanocrystalline SiC at initial room temperature^[137]

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图 25 不同冲击强度下SiC的层裂过程^[137]

Figure 25. Spallation process of silicon carbide under different shock intensities^[137]

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图 26 SiC层裂过程中的裂纹演化(a)和SiC中纳米孔洞在微层裂过程中的成核与生长(b)^[142]

Figure 26. Evolution of cracks during the spall process in SiC (a) and the nucleation and growth of nano-voids during the micro-spall process in SiC (b)^[142]

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图 27 SiC的冲击熔化曲线 (a)，冲击粒子速度为5 km/s (b) 和6 km/s (c) 时的热力学路径分析^[137]

Figure 27. Shock Hugoniot temperature and melting curve in silicon carbide (a), the thermodynamic analysis in case of 5 km/s (b) and 6 km/s (c) of the particle velocity^[137]

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图 28 (a) 样品中原子数-晶粒尺寸关系，(b) 密度和单位原子能量与晶粒尺寸的关系，(c) 晶粒或晶界中原子的比例作为晶粒大小的函数（黑色和红线分别为颗粒原子和晶界原子比例的理论预测）^[143]

Figure 28. (a) The number of atoms in samples as a function of grain size, (b) the density and per-atom energy as functions of grain size, (c) the fraction of atoms in grains or grain boundaries as functions of grain size (The black and red lines are the theoretical predictions of the fraction of grains and grain boundaries atoms, respectively.)^[143]

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图 29 (a)～(d)纳米多晶在不同晶粒尺寸下的冲击引起的晶体塑性变形，(e)～(f)不同晶粒尺寸的纳米碳化硅在u_p = 2 km/s时的冲击塑性统计^[143]

Figure 29. (a)–(d) Shock induced plasticity in nanocrystalline SiC with different grain size; (e)–(f) the statistics of shock induced plasticity at u_p = 2 km/s including twinning, rotation in nanocrystalline SiC with different grain sizes^[143]

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图 30 在不同粒子速度下冲击压缩后不同配位数原子占比统计^[143]

Figure 30. Percentages of atoms with different coordination number under shock compression at various u_p^[143]

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图 31 不同粒子速度下直接法与间接法所得层裂强度与晶粒尺寸的关联性^[143]

Figure 31. Correlation between spall strengths obtained from direct/indirect methods and grain size at different particle velocities^[143]

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图 32 超高速弹丸冲击AlN陶瓷模型^[126]

Figure 32. Model of AlN ceramics shocked by hypervelocity projectile^[126]

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图 33 MD-PD仿真框架示意图（基于不同双晶的MD模拟结果，对多晶钯模拟池中晶粒和晶界的性质进行了随机分配）^[162]

Figure 33. Schematic diagram showing the MD-PD simulation framework (Properties of grains and GBs in polycrystalline Pd simulation cell are assigned stochastically, based on the MD simulation results of different bi-crystal)^[162]

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图 34 多晶3C-SiC的杨氏模量(a)和破坏应力 (b) 随晶粒尺寸的变化^[162]

Figure 34. Young’s modulus (a) and failure stress (b) as a function of grain size in polycrystalline 3C-SiC^[162]

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图 35 纳米多晶SiC压痕模拟^[197]

Figure 35. Simulations of indentation in nanocrystalline silicon carbide^[197]

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图 36 (a) 不同晶粒尺寸纳米多晶SiC的应力-应变曲线，(b) 拉伸韧性-晶粒尺寸关系，(c) 最大应力-晶粒尺寸关系^[194]

Figure 36. (a) Stress-strain curves of nanocrystalline SiC with different grain sizes, (b) tensile toughness as a function of grain size, (c) maximum strength as a function of grain size^[194]

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图 37 拉伸载荷下不同晶粒尺寸SiC的力学响应^[197]

Figure 37. Mechanical responses of SiC with different grain size under tensile loadings^[197]

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图 38 6 nm处3C-SiC单晶压痕处的整体缺陷网格^[215]

Figure 38. Overall defect network of indented single crystalline 3C-SiC substrate at 6 nm^[215]

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图 39 (a)～(d) λ= 1.5 nm时样品在剪切诱导下的结构演化；(e)～(h) λ= 3 nm时样品在单轴压缩下的微观结构演化^[216]

Figure 39. (a)–(d) Shear-induced fracture in the nanotwinned sample with λ = 1.5 nm subjected to uniaxial compressive loading; (e)–(h) microstructural evolution of the nanotwinned sample with λ = 3 nm subjected to uniaxial compressive loading^[216]

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