磁场对P3HT:PCBM活性层的薄膜形貌及光电性能的影响

申会 曾春平 马琨 吴加权 吴光敏

申会, 曾春平, 马琨, 吴加权, 吴光敏. 磁场对P3HT:PCBM活性层的薄膜形貌及光电性能的影响[J]. 高压物理学报, 2016, 30(1): 71-77. doi: 10.11858/gywlxb.2016.01.011
引用本文: 申会, 曾春平, 马琨, 吴加权, 吴光敏. 磁场对P3HT:PCBM活性层的薄膜形貌及光电性能的影响[J]. 高压物理学报, 2016, 30(1): 71-77. doi: 10.11858/gywlxb.2016.01.011
SHEN Hui, ZENG Chun-Ping, MA Kun, WU Jia-Quan, WU Guang-Min. Effects of Magnetic Field on the Film Morphology and Photoelectric Properties of the Active Layer P3HT:PCBM[J]. Chinese Journal of High Pressure Physics, 2016, 30(1): 71-77. doi: 10.11858/gywlxb.2016.01.011
Citation: SHEN Hui, ZENG Chun-Ping, MA Kun, WU Jia-Quan, WU Guang-Min. Effects of Magnetic Field on the Film Morphology and Photoelectric Properties of the Active Layer P3HT:PCBM[J]. Chinese Journal of High Pressure Physics, 2016, 30(1): 71-77. doi: 10.11858/gywlxb.2016.01.011

磁场对P3HT:PCBM活性层的薄膜形貌及光电性能的影响

doi: 10.11858/gywlxb.2016.01.011
基金项目: 

国家自然科学基金 51278235

云南省高校结构健康诊断重点实验室平台建设项目 KKKP201207003

昆明理工大学学科方向团队基金 14078202

详细信息
    作者简介:

    申会(1987-), 男, 硕士研究生, 主要从事光电材料的性能检测研究.E-mail:shgx1314@sina.com

    通讯作者:

    曾春平(1965-), 男, 副教授, 主要从事光电检测及系统仿真研究.E-mail:zcp@kmust.edu.cn

  • 中图分类号: O482;TK513.5

Effects of Magnetic Field on the Film Morphology and Photoelectric Properties of the Active Layer P3HT:PCBM

  • 摘要: 以P3HT(Poly (3-Hexylthiophene))为电子给体, PCBM ([6, 6]-Phenyl C61 Butyric Acid Methyl Ester)为电子受体, 在活性层P3HT:PCBM的退火过程中, 利用磁场对活性层有机分子的排列取向作用, 制备了有机体异质结太阳能电池。研究结果表明:当磁场强度为0.9MA/m时, 器件的短路电流密度从7.414A/cm2提高到8.332A/cm2, 填充因子也相应地增加, 但开路电压却有所降低, 最高的光电转换效率为2.562%。由光致发光光谱和原子力显微图像可知, 磁场对活性层的结晶度、内部分子排列和表面形貌都有明显的影响。

     

  • 图  PCBM和P3HT的分子结构

    Figure  1.  Molecular structure of PCBM and P3HT

    图  体异质结聚合物太阳能电池结构

    Figure  2.  Structure of the bulk-heterojunction polymer solar cell

    图  磁场处理器件活性层的示意图

    Figure  3.  Schematic illustration of the magnetic field treated active layer

    图  磁场作用下活性层的分子排列

    Figure  4.  Molecular arrangement of the active layer under the external magnetic field

    图  不同磁场强度处理后电池器件的J-V曲线

    Figure  5.  J-V characteristics of the cells under different intensities of the magnetic field treatment

    图  不同磁场强度处理后电池器件的IPCE曲线

    Figure  6.  IPCE characteristics of the cells under different intensities of the magnetic field treatment

    图  不同磁场强度处理后活性层P3HT:PCBM的PL谱

    Figure  7.  PL spectra of the P3HT:PCBM active layers under different intensities of the magnetic field treatment

    图  不同磁场强度处理后P3HT:PCBM活性层的AFM图像

    Figure  8.  AFM images of the P3HT:PCBM active layers under different intensities of the magnetic field treatment

    表  1  不同磁场强度处理后P3HT:PCBM OSC的性能

    Table  1.   Performance of P3HT:PCBM OSC under different intensity of external magnetic field treatment

    H/(MA/m) Jsc/(mA/cm2) Voc/(V) FF PCE/(%) Rs/(Ω·cm2) Rsh/(Ω·cm2)
    0 7.414 0.555 0.512 2.107 18.56 197.60
    0.2 7.646 0.558 0.504 2.154 16.20 223.12
    0.4 8.063 0.552 0.527 2.344 14.04 260.04
    0.9 8.332 0.565 0.543 2.562 13.28 279.56
    1.5 7.734 0.556 0.524 2.253 15.64 248.96
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  • 收稿日期:  2014-11-26
  • 修回日期:  2015-02-12

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