Design Principles and Experimental Study of Centimeter-Scale Sample Chamber for Two-Stage 6-8 Type Static High Pressure Apparatus
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摘要: 利用大腔体静高压装置的实验数据,提出了“极限压缩体积比”的概念以及腔体与组装设计的一般性原理。通过对极限压缩体积比的分析,设计出了样品腔体达到厘米级的36/20(正八面体传压介质边长为36 mm/末级压砧正三角形截角边长为20 mm)组装。采用原位电阻观测Bi(Ⅲ-Ⅴ, 7.7 GPa),ZnTe(Ⅰ-Ⅱ, 5 GPa; Ⅱ-Ⅲ, 8.9~9.5 GPa; 半导体-金属, 11.5~13.0 GPa)和ZnS(半导体-金属, 15.6 GPa)在高压下相变的方法, 标定了36/20组装的腔体压力。实验结果表明所设计样品腔的尺寸大于10 mm,压力可以达到15 GPa以上。本工作使得基于国产6×2 500 t(吨)铰链式六面顶压机的二级6-8型静高压装置在高压实验研究中具有更加广阔的应用前景。Abstract: By analyzing experimental data, we put forward the concept of the limit compression volume ratio and the general design principles of centimeter magnitude sample chamber for two-stage 6-8 type static high pressure apparatus.Based on the limit compression volume ratio, we designed an assembly of 36/20 (Octahedral edge-length 36 mm/anvil truncation edge-length 20 mm) with high pressure generating efficiency.Pressure calibration at room temperature for the 36/20 assembly was performed using the phase transitions of Bi (Ⅲ-Ⅴ, 7.7 GPa), ZnTe (Ⅰ-Ⅱ, 5 GPa; Ⅱ-Ⅲ, 8.9-9.5 GPa; semiconductor-metal, 11.5-13.0 GPa)and ZnS (semiconductor-metal, 15.6 GPa).The experimental results show that the pressure of sample chamber exceeds 15 GPa and the sample diameter reaches 1 cm.The improvements of two-stage 6-8 type static high pressure apparatus have great potential applications in high-pressure experimental research and industrial production.
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Key words:
- high pressure apparatus /
- pressure calibration /
- two-stage pressure cell /
- cubic press
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表 1 常用组装的具体参数
Table 1. The specific parameters of assemblies
Octahedral edge-
length/(mm)Anvil truncation
edge-length/(mm)Limit compression
volume ratioAssembly Reference 4.70 1.50 30.76 4.7/1.5 Kubo A, et al.(2000)[18] 6.24 2.00 30.37 6.24/2 Shatskiy A, et al.(2011)[19] 7.00 2.50 21.95 7/2.5 Akaogi M, et al.(1999)[20] 8.00 3.00 18.96 8/3 Bertka C M, et al.(1997)[21] 10.00 3.50 23.32 10/3.5 Stewart A J, et al.(2006)[22] 10.00 4.00 15.63 10/4 Liebermann R C, et al.(1992)[23] 14.00 6.00 12.70 14/6 Shatskiy A, et al.(2011)[19] 14.00 7.00 8.00 14/7 Shatskiy A, et al.(2011)[19] 16.00 7.00 11.94 16/7 Shatskiy A, et al.(2011)[19] 18.00 8.00 11.39 18/8 Frost D J, et al.(2004)[24] 18.00 9.00 8.00 18/9 Shatskiy A, et al.(2011)[19] 25.00 15.00 4.63 25/15 Frost D J, et al.(2004)[24] 38.00 22.00 5.15 38/22 Irifune T, (2010)[25] 表 2 36/20组装的标压数据
Table 2. Data of pressure calibration for assembly 36/20
Pressure
calibration
materialPhase
transformationChamber
pressure/
(GPa)Applied
load/
(MN)Bi Ⅰ-Ⅱ 2.55 - Bi Ⅱ-Ⅲ 2.69 - Bi Ⅲ-Ⅴ 7.70 6.8 ZnTe Ⅰ-Ⅱ 5.00 4.5 ZnTe Ⅱ-Ⅲ 8.90-9.50 8.0 ZnTe Semiconductor-metal 11.50-13.00 13.2 ZnS Semiconductor-metal 15.6 19.0 -
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