基于集成技术的金刚石对顶砧原位电学量测量

高春晓

高春晓. 基于集成技术的金刚石对顶砧原位电学量测量[J]. 高压物理学报, 2013, 27(1): 1-18. doi: 10.11858/gywlxb.2013.01.001
引用本文: 高春晓. 基于集成技术的金刚石对顶砧原位电学量测量[J]. 高压物理学报, 2013, 27(1): 1-18. doi: 10.11858/gywlxb.2013.01.001
GAO Chun-Xiao. In Situ Electrical Measurement in Diamond Anvil Cell Equipped with Microcircuit by Integration Technology[J]. Chinese Journal of High Pressure Physics, 2013, 27(1): 1-18. doi: 10.11858/gywlxb.2013.01.001
Citation: GAO Chun-Xiao. In Situ Electrical Measurement in Diamond Anvil Cell Equipped with Microcircuit by Integration Technology[J]. Chinese Journal of High Pressure Physics, 2013, 27(1): 1-18. doi: 10.11858/gywlxb.2013.01.001

基于集成技术的金刚石对顶砧原位电学量测量

doi: 10.11858/gywlxb.2013.01.001
详细信息
    通讯作者:

    高春晓 E-mail:cxgao599@yahoo.com.cn

In Situ Electrical Measurement in Diamond Anvil Cell Equipped with Microcircuit by Integration Technology

  • 摘要: 金刚石对顶砧是应用最多的高压装置,能够产生超过400 GPa的超高压力,借助激光加温,还可以加载6 000 K的高温。近20年来,基于金刚石对顶砧的微小测量电路集成技术的突破,带动了高压原位电学量测量技术的发展,使常压下能够测量的电学量大部分都能在金刚石对顶砧中的高压环境下实现。全面回顾了基于集成技术的金刚石对顶砧高压原位电学量测量技术的发展历程,介绍了最新的技术进展。

     

  • Bridgman P W. Recent work in the field of high pressures [J]. Rev Mod Phys, 1946, 18(1): 1-93.
    Jacobs R B. X-ray diffraction of substances under high pressures [J]. Phys Rev, 1938, 54(5): 325-331.
    Jacobs R B. Polymorphic transitions in metallic halides [J]. Phys Rev, 1938, 54(6): 468-474.
    Jacobs R B. Sodium chloride at very high pressures [J]. Phys Rev, 1940, 57(11): 1046.
    Lawson A W, Riley N A. An X-ray camera for obtaining powder pictures at high pressures [J]. Rev Sci Instrum, 1949, 20(11): 763-765.
    Lawson A W, Tang T Y. A diamond bomb for obtaining powder pictures at high pressures [J]. Rev Sci Instrum, 1950, 21(9): 815.
    Jamieson J C, Lawson A W, Nachtrieb N D. New device for obtaining X-ray diffraction patterns from substances exposed to high pressure [J]. Rev Sci Instrum, 1959, 30(11): 1016-1019.
    Weir C E, Lippincott E R, Valkenburg A, et al. Infrared studies in the 1- to 15-micron region to 30000 atmospheres [J]. J Res Natl Bur Stand A, 1959, 63(1): 55-62.
    Piermarini G J, Weir C E. A diamond cell for X-ray diffraction studies at high pressures [J]. J Res Natl Bur Stand A, 1962, 66(4): 325-331.
    Weir C E, Block S, Piermarini G. Single crystal X-ray diffraction at high pressures [J]. J Res Natl Bur Stand C, 1965, 69(4): 275-281.
    van Valkenburg. Visual observations of single crystal transitions under true hydrostatic pressures up to 40 kilobar [C]//Conference Internationale sur les Hautes Pressions, Le Creusot, France, 1965.
    Piermarini G J, Block S, Barnett J D. Hydrostatic limits in liquids and solids to 100 kbar [J]. J Appl Phys, 1973, 44(12): 5377-5382.
    Forman R A, Piermarini G J, Barnett J D, et al. Pressure measurement made by the utilization of ruby sharp-line luminescence [J]. Science, 1972, 176(4032): 284-285.
    Barnett J D, Block S, Piermarini G J. An optical fluorescence system for quantitative pressure measurement in the diamond-anvil cell [J]. Rev Sci Instrum, 1973, 44(1): 1-9.
    Jayaraman A. Diamond anvil cell and high-pressure physical investigations [J]. Rev Mod Phys, 1983, 55(1): 65-108.
    Brasch J W, Melveger A J, Lippincott E R. Laser excited Raman spectra of samples under very high pressures [J]. Chem Phys Lett, 1968, 2(2): 99-100.
    Adams D M, Payne S J, Martin K M. The fluorescence of diamond and Raman spectroscopy at high pressures using a new design of diamond anvil cell [J]. Appl Spectrosc, 1973, 27(5): 377-381.
    Whitfield C H, Brody E M, Bassett W A. Elastic moduli of NaCl by Brillouin scattering at high pressure in a diamond anvil cell [J]. Rev Sci Instrum, 1976, 47(8): 942-947.
    Welber B, Cardona M, Kim C K, et al. Dependence of the direct energy gap of GaAs on hydrostatic pressure [J]. Phys Rev B, 1975, 12(12): 5729-5738.
    Welber B. Optical microspectroscopic system for use with a diamond anvil high pressure cell to 200 kilobar [J]. Rev Sci Instrum, 1976, 47(2): 183-186.
    Welber B. Micro-optic system for reflectance measurements at pressures to 70 kilobar [J]. Rev Sci Instrum, 1977, 48(4): 395-398.
    Adams D M, Sharma S K. Spectroscopy at very high pressures. ⅩⅢ: Refracting beam condenser for infrared spectroscopy with a diamond anvil cell [J]. J Phys E, 1977, 10(8): 838-842.
    Muller H, Trommer R, Cardona M, et al. Pressure dependence of the direct absorption edge of InP [J]. Phys Rev B, 1980, 21(10): 4879-4883.
    Muller H, Ves S, Hochheimer H D, et al. Pressure-induced phase transitions and shifts in the absorption edge of CuCl [J]. Phys Rev B, 1980, 22(2): 1052-1057.
    Batlogg B, Remeika J P. Definite experimental evidence against intrinsic electron-hole superconductivity in pure CuCl [J]. Phys Rev Lett, 1980, 45(13): 1126-1129.
    Ves S, Glotzel D, Cardona M, et al. Pressure dependence of the optical properties and the band structure of the copper and silver halides [J]. Phys Rev B, 1981, 24(6): 3073-3085.
    Syassen K, Sonnenschein R. Microoptic double beam system for reflectance and absorption measurements at high pressure [J]. Rev Sci Instrum, 1982, 53(5): 644-660.
    Yu P Y, Welber B. High pressure photoluminescence and resonant Raman study of GaAs [J]. Solid State Commun, 1978, 25(4): 209-211.
    Olego D, Cardona M, Mller H. Photoluminescence in heavily doped GaAs. Ⅱ. Hydrostatic pressure dependence [J]. Phys Rev B, 1980, 22(2): 894-903.
    Blacha A, Cardona M, Christensen N E, et al. Spin-orbit splitting of the copper halides and its volume dependence [J]. Solid State Commun, 1982, 43(3): 183-187.
    Hensley W K, Bassett W A, Huizenga J R. Pressure dependence of the radioactive decay constant of beryllium-7 [J]. Science, 1973, 181(4105): 1164-1168.
    Huggins F E, Mao H K, Virgo D. Mssbauer studies at high pressure using the diamond-anvil cell [J]. Carnegie Institution of Washington Year Book, 1975, 74: 405-410.
    Piermarini G J, Forman R A, Block S. Viscosity measurements in the diamond anvil pressure cell [J]. Rev Sci Instrum, 1978, 49(8): 1061-1066.
    Vodar B, Martean P. High Pressure Science and Technology: Proceedings of the 7th International AIRAPT Conference [M]. Oxford, UK: Pergamon Press, 1980: 150.
    Bassett W A, Takahashi T. Silver iodide polymorphs [J]. Am Mineral, 1965, 50: 1576-1594.
    Ming L C, Bassett W A. Laser heating in the diamond anvil press up to 2000 ℃ sustained and 3000 ℃ pulsed at pressures up to 260 kilobars [J]. Rev Sci Instrum, 1974, 45(9): 1115-1118.
    Liu L G, Bassett W A. The melting of iron up to 200 kbar [J]. J Geophys Res, 1975, 80(26): 3777-3782.
    Webb A W, Gubser D U, Towle L C. Cryostat for generating pressures to 100 kilobar and temperatures to 0. 03 K [J]. Rev Sci Instrum, 1976, 47(1): 59-62.
    Liebenberg D H. A new hydrostatic medium for diamond anvil cells to 300 kbar pressure [J]. Phys Lett A, 1979, 73(1): 74-76.
    Mao H K, Bell P M. Design of the diamond-window, high-pressure apparatus for cryogenic experiments [J]. Carnegie Institution of Washington Year Book, 1979, 78: 659-660.
    Besson J M, Pinceaux J P. Melting of helium at room temperature and high pressure [J]. Science, 1979, 206: 1073-1075.
    Mills R L, Liebenberg D H, Bronson J C, et al. Procedure for loading diamond cells with high-pressure gas [J]. Rev Sci Instrum, 1980, 51(7): 891-895.
    Shaw R W, Nicol M. Simple low-temperature press for diamond-anvil high pressure cells [J]. Rev Sci Instrum, 1981, 52(7): 1103-1104.
    Diatschenko V, Chu C W. Melting of normal hydrogen under high pressures between 20 and 300 kelvins [J]. Science, 1981, 212(4501): 1393-1394.
    Buras B, Olsen J S, Gerward L, et al. X-ray energy-dispersive diffractometry using synchrotron radiation [J]. J Appl Crystallogr, 1977, 10(6): 431-438.
    Skelton E F, Spain I L, Yu S C, et al. Variable temperature pressure cell for polycrystalline X-ray studies down to 2 K-Application to Bi [J]. Rev Sci Instrum, 1977, 48(7): 879-883.
    Fujii Y, Shimomura O, Takemura K, et al. The application of a position-sensitive detector to high-pressure X-ray diffraction using a diamond-anvil cell [J]. J Appl Crystallogr, 1980, 13(3): 284-289.
    Schilling J S, Schelton R N. Physics of Solids under High Pressure: Proceedings of the International Symposium on the Physics of Solids under High Pressure [M]. Amsterdam, Netherlands: North-Holland Publishing, 1981: 81.
    Baublitz M A, Arnold V, Ruoff A L. Energy dispersive X-ray diffraction from high pressure polycrystalline specimens using synchrotron radiation [J]. Rev Sci Instrum, 1981, 52(11): 616-624.
    Mao H K, Bell P M. The ultrahigh-pressure diamond cell: Design applications for electrical measurements of mineral samples at 1. 2 Mbar [J]. Carnegie Institution of Washington Year Book, 1976, 75: 824-827.
    Manghnani M H, Akimoto S. High-Pressure Research: Applications in Geophysics [M]. New York, USA: Academic Press, 1977: 503.
    Mao H K, Bell P M. Electrical resistivity measurements of conductors in the diamond-window, high-pressure cell [J]. Rev Sci Instrum, 1981, 52(4): 615-616.
    Sakai N, Kajiwara T, Tsuji K, et al. Electrical resistance measurements at high pressure and low temperature using a diamond-anvil cell [J]. Rev Sci Instrum, 1982, 53(4): 499-502.
    Lacam A. Pressure and composition dependence of the electrical conductivity of iron-rich synthetic olivines to 200 kbar [J]. Phys Chem Miner, 1983, 9(3/4): 127-132.
    Reichlin R L. Measuring the electrical resistance of metals to 40 GPa in the diamond-anvil cell [J]. Rev Sci Instrum, 1983, 54(12): 1674-1677.
    Grzybowski T A, Ruoff A L. Band-overlap metallization of BaTe [J]. Phys Rev Lett, 1984, 53(5): 489-492.
    Gonzalez J, Besson J M, Weill G. Electrical transport measurements in a gasketed diamond anvil cell up to 18 GPa [J]. Rev Sci Instrum, 1986, 57(1): 106-107.
    Shimizu K, Suhara K, Ikumo M, et al. Superconductivity in oxygen [J]. Nature, 1998, 393: 767-769.
    Eremets M I, Struzhkin V V, Mao H K, et al. Superconductivity in boron [J]. Science, 2001, 293(5528): 272-274.
    Eremets M I, Shimizu K, Kobayashi T C, et al. Metallic CsI at pressures of up to 220 gigapascals [J]. Science, 1998, 281(5381): 1333-1335.
    Amaya K, Shimizu K. High pressure induced superconductivity [J]. Physica C, 2003, 392: 17-21.
    Hemmes H, Driessen A, Kos J, et al. Synthesis of metal hydrides and in situ resistance measurements in a high-pressure diamond anvil cell [J]. Rev Sci Instrum, 1989, 60(3): 474-480.
    Weir S T, Akella J, Aracne-Ruddle C, et al. Epitaxial diamond encapsulation of metal microprobes for high pressure experiments [J]. Appl Phys Lett, 2000, 77(21): 3400-3402.
    Zaitsev A M, Burchard M, Meijer J, et al. Diamond pressure and temperature sensors for high-pressure high-temperature application [J]. Phys Status Solidi A, 2001, 185(1): 59-64.
    Jackson D D, Aracne-Ruddle C, Malba V, et al. Magnetic susceptibility measurements at high pressure using designer diamond anvils [J]. Rev Sci Instrum, 2003, 74(4): 2467-2471.
    Han Y H, Gao C X, Ma Y Z, et al. Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement [J]. Appl Phys Lett, 2005, 86(6): 064104.
    Li M, Gao C X, Peng G, et al. Thickness measurement of sample in diamond anvil cell [J]. Rev Sci Instrum, 2007, 78(7): 075106.
    He C Y, Gao C X, Ma Y Z, et al. In situ electrical impedance spectroscopy under high pressure on diamond anvil cell [J]. Appl Phys Lett, 2007, 91(9): 092124.
    Hu T J, Cui X Y, Gao Y, et al. In situ Hall effect measurement on diamond anvil cell under high pressure [J]. Rev Sci Instrum, 2010, 81(11): 115101.
    Wang Y, Han Y H, Gao C X, et al. In situ impedance measurements in diamond anvil cell under high pressure [J]. Rev Sci Instrum, 2010, 81(1): 013904.
    Su N, Han Y, Ma Y, et al. Pressure-induced magnetoresistivity reversal in magnetite [J]. Appl Phys Lett, 2011, 99(21): 211902.
    Li M, Yang J, Snoussi K, et al. Grain boundary effect on the -boron electrical transport properties at high pressure [J]. Appl Phys Lett, 2010, 97(17): 174101.
    Eremets M I, Troyan I A. Conductive dense hydrogen [J]. Nat Mater, 2011, 10: 927-931.
    Valdes L B. Resistivity measurements on germanium for transistors [C]//Proceedings of the IRE, New York, USA: Institute of Radio Engineers, 1954: 420-427.
    Smits F M. Measurements of sheet resistivities with the four-point probe [J]. Bell Syst Tech J, 1958, 37: 711-718.
    Vaughan D E. Four-probe resistivity measurements on small circular specimens [J]. Br J Appl Phys, 1961, 12(8): 414-416.
    Hargreaves J K, Millard D. The accuracy of four-probe resistivity measurements on silicon [J]. Br J Appl Phys, 1962, 13(5): 231-234.
    van der Pauw L J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape [J]. Philips Res Repts, 1958, 13(1): 1-9.
    van der Pauw L J. A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape [J]. Philips Tech Rev, 1958, 20: 220-224.
    Pu F N, Ding Y Z, Gou Q Q. Establishment of an experimental method for measuring metal resistance variation by a diamond anvil cell and measurement of high pressure resistance variation of manganin [J]. Science in China Ser A, 1991(7): 736-741. (in Chinese)
    蒲丰年, 丁玉珍, 芶清泉. 利用金刚石对顶砧超高压装置测量金属高压电阻变化率的实验方法的建立及锰铜高压电阻变化率的测量 [J]. 中国科学A辑, 1991(7): 736-741.
    Li M, Gao C X, Ma Y Z, et al. In situ electrical conductivity measurement of high-pressure molten (Mg0. 875, Fe0. 125)2SiO4 [J]. Appl Phys Lett, 2007, 90(11): 113507.
    Hemley R J, Mao H K, Shen G, et al. X-ray imaging of stress and strain of diamond, iron, and tungsten at megabar pressures [J]. Science, 1997, 276(5316): 1242-1245.
    Hixson R S, Boness D A, Shaner J W, et al. Acoustic velocities and phase transitions in molybdenum under strong shock compression [J]. Phys Rev Lett, 1989, 62(6): 637-640.
    Jephcoat A P, Hemley R J, Mao H K. X-ray diffraction of ruby (Al2O3: Cr3+) to 175 GPa [J]. Physica B, 1988, 150(1/2): 115-121.
    Peng G, Han Y H, Gao C X, et al. The effect of sample insulation on experiment precision of resistivity measurement in a diamond anvil cell [J]. Rev Sci Instrum, 2010, 81(3): 036108.
    Gao C X, Han Y H, Ma Y Z, et al. Accurate measurements of high pressure resistivity in a diamond anvil cell [J]. Rev Sci Instrum, 2005, 76(8): 083912.
    Huang X W, Gao C X, Han Y H, et al. Finite element analysis of resistivity measurement with van der Pauw method in a diamond anvil cell [J]. Appl Phys Lett, 2007, 90(24): 242102.
    Huang X W, Gao C X, Li M, et al. Finite element analysis of resistivity measurement with four point probe in a diamond anvil cell [J]. J Appl Phys, 2007, 101(6): 064904.
    Li Y Q, Gao Y, Han Y H, et al. Electrical transport properties of BaWO4 under high pressure [J]. J Phys Chem C, 2012, 116(48): 25198-25205.
    Yang J, Li M, Zhang H L, et al. Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure [J]. Rev Sci Instrum, 2011, 82(4): 045108.
    Yang J, Peng G, Han Y H, et al. Accurate measurement of sample conductivity in a diamond anvil cell with axis symmetrical electrodes and finite difference calculation [J]. AIP Advances, 2011, 1(3): 032116.
    Wang Q L, Yang J, Liu B, et al. Study on phase transition of SrTiO3 by in situ impedance measurement under high pressure [J]. Phys Status Solidi B, 2011, 248(5): 1111-1114.
    Li Y, Han Y H, Ma Y Z, et al. Pressure effects on grain boundary, electrical and vibrational properties of the polycrystalline BaTeO3 [J]. Europhys Lett, 2012, 98(6): 66006.
    Liu C L, Sui Y M, Ren W B, et al. Electrical properties and behaviors of cuprous oxide cubes under high pressure [J]. Inorg Chem, 2012, 51(13): 7001-7003.
    Liu C L, Han Y H, Li Q, et al. Size-dependent phase transition of graphite to superhard graphite under high pressure at room temperature [J]. J Appl Phys, 2012, 112(10): 103707.
    Liu C L, Han Y H, Wang Y, et al. Preparation and characterization of boron doped diamond electrodes on diamond anvil for in situ electrical measurements under high pressure [J]. Diam Relat Mater, 2011, 20(2): 250-253.
    Zhang J K, Han Y H, Liu C L, et al. Electrical transport properties of SnO under high pressure [J]. J Phys Chem C, 2011, 115(42): 20710-20715.
    Li M, Wang H X, Snoussi K, et al. Pressure and temperature dependences of electronic transport properties in CaB6 [J]. J Appl Phys, 2010, 108(10): 103710.
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出版历程
  • 收稿日期:  2013-02-11
  • 修回日期:  2013-02-11
  • 发布日期:  2013-02-15

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