锂基触媒体系中不同形状立方氮化硼晶体的高压合成

杨大鹏 吉晓瑞 李英爱 张铁臣

杨大鹏, 吉晓瑞, 李英爱, 张铁臣. 锂基触媒体系中不同形状立方氮化硼晶体的高压合成[J]. 高压物理学报, 2010, 24(3): 237-240 . doi: 10.11858/gywlxb.2010.03.013
引用本文: 杨大鹏, 吉晓瑞, 李英爱, 张铁臣. 锂基触媒体系中不同形状立方氮化硼晶体的高压合成[J]. 高压物理学报, 2010, 24(3): 237-240 . doi: 10.11858/gywlxb.2010.03.013
YANG Da-Peng, JI Xiao-Rui, LI Ying-Ai, ZHANG Tie-Chen. The High-Pressure Synthesis of Cubic Boron Nitride Crystals with Various Shapes in Li-Based System[J]. Chinese Journal of High Pressure Physics, 2010, 24(3): 237-240 . doi: 10.11858/gywlxb.2010.03.013
Citation: YANG Da-Peng, JI Xiao-Rui, LI Ying-Ai, ZHANG Tie-Chen. The High-Pressure Synthesis of Cubic Boron Nitride Crystals with Various Shapes in Li-Based System[J]. Chinese Journal of High Pressure Physics, 2010, 24(3): 237-240 . doi: 10.11858/gywlxb.2010.03.013

锂基触媒体系中不同形状立方氮化硼晶体的高压合成

doi: 10.11858/gywlxb.2010.03.013
详细信息
    通讯作者:

    杨大鹏

The High-Pressure Synthesis of Cubic Boron Nitride Crystals with Various Shapes in Li-Based System

More Information
    Corresponding author: YANG Da-Peng
  • 摘要: 采用高温高压方法,以六角氮化硼(hBN)为原料、选用氮化锂(Li3N)、氢化锂+氮化锂(LiH+Li3N)、氢化锂(LiH)、氢化锂+氨基锂(LiH+LiNH2)、氮化锂+氨基锂(Li3N+LiNH2)为触媒,在合适的温度、压力及生长工艺条件下,分别得到了厚板状、类球形、八面体或六八面体、扁锥状和片状六边形形貌立方氮化硼(cBN)晶体。总结了不同锂基触媒/添加剂对合成的cBN晶体形貌变化的影响。

     

  • Wentorf R H. Sythesis of the Cubic Form of Boron Nitride [J]. J Chem Phys, 1961, 34: 809-812.
    McKenzie D R, Sainty W G, Green D. The Microstructure of Boron Nitride Thin Films [J]. Mater Sci Forum, 1990, (54-55): 193-206.
    Davis R F. Ⅲ-Ⅴ Nitrides for Electronic and Optoelectronic Applications [J]. Proc IEEE, 1991, 79: 702-712
    Sichuan Cubic Boron Nitride Co-op. Group. The Synthesis of Cubic Boron Nitride under High Pressures and Temperatures [J]. Acta Phys Sin, 1976, 25(1): 1-9. (in Chinese)
    四川省立方氮化硼协作组. 高温高压下立方氮化硼的合成 [J]. 物理学报, 1976, 25(1): 1-9.
    Demazeau G. Growth of Cubic Boron Nitride by Chemical Vapor Deposition and High-Pressure High-Temperature Synthesis [J]. Diamond Relat Mater, 1993, 2: 197-200.
    Sumiya H, Iseki T, Onodera A. High Pressure Synthesis of Cubic Boron Nitride from Amorphous State [J]. Mater Res Bull, 1983, 18: 1203-1207.
    Stockel S, Weise K, Dietrich D, et al. Influence of Composition and Structure on the Mechanical Properties of BCN Coatings Deposited by Thermal CVD [J]. Thin Solid Films, 2002, 420-421: 465-471.
    Deng J X, Wang X Y, Yao Q, et al. Optical Band Gap of Cubic Boron Nitride Thin Films Deposited by Sputtering [J]. Acta Phys Sin, 2008, 57: 6631-6635. (in Chinese)
    邓金祥, 汪旭洋, 姚倩, 等. 立方氮化硼薄膜的光学带隙 [J]. 物理学报, 2008, 57: 6631-6635.
    Wentorf R H. Preparation of Semiconducting Cubic Boron Nitride [J]. J Chem Phys, 1962, 36: 1990-1991.
    Vel L, Demazeau G, Etourneau J. Cubic Boron Nitride: Synthesis, Physicochemical Properties and Applications [J]. Mater Sci Eng B, 1991, 10: 149-164.
    Mishima O, Tanaka J, Yamaoka S, et al. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure [J]. Science, 1987, 238: 181-183.
    Edgar J H. Properties of Group Ⅲ Nitride [M]. London: INSPEC, 1994: 7.
  • 加载中
计量
  • 文章访问数:  7901
  • HTML全文浏览量:  329
  • PDF下载量:  689
出版历程
  • 收稿日期:  2009-05-27
  • 修回日期:  2009-09-21
  • 发布日期:  2010-06-15

目录

    /

    返回文章
    返回