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摘要: 利用直流磁控溅射薄膜工艺制备阵列式薄膜锰铜压阻计，以氧化铝作为基片和绝缘封装材料。在结构上，4个具有相同阻值的薄膜锰铜计在同一氧化铝基片上呈对称分布。51.72 GPa压力下的动态加载实验表明，4个计的压阻一致性好，无高压旁路效应，验证了薄膜锰铜压阻计动态测试的准确性和可靠性。Abstract: Array MnCu film piezoresistance gauges were fabricated by D.C. magnetism sputtering with 99% Al2O3 taken as substrate and insulator. Four MnCu gauges with the same resistance were deposited on one Al2O3 substrate symmetrically. Through dynamic loading experiments at the pressure of 51.72 GPa, it is indicated that four piezoresistance gauges have good consistency, and keep insulating trait under high pressure, which verifies the reliability of dynamic testing of MnCu film piezoresistance gauges.
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Key words:
- MnCu film /
- piezoresistance coefficient /
- array /
- heat treatment
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