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摘要: 在利用等离子体增强脉冲激光沉积系统沉积立方氮化硼（cBN）薄膜时，发现了氮化硼（BN）材料的E-BN相，并利用扫描电镜和红外吸收光谱及X射线衍射技术对薄膜样品进行了分析，得到了制备较高质量E-BN薄膜的一些热力学参数及时间参数，验证了现有的E-BN结构的形成理论。Abstract: In this study, explosion boron nitride (E-BN) was found in the process of depositing cubic boron nitride (cBN) thin film by Plasma Enhanced Pulsed Laser Deposition (PEPLD) method at room temperature. The E-BN thin film was identified using SEM, FTIR and X-ray diffraction techniques. The thermodynamic parameters and time parameter for preparing high-quality E-BN thin film were obtained. This has supported the existing formation theory of the structure of E-BN.
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Key words:
- E-BN thin film /
- pulsed laser deposition /
- SEM /
- FTIR spectra /
- X-ray diffraction
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ZHANG Tie-chen, GAO Chun-xiao, WANG Cheng-xin, et al. Cubic Boron Nitride Crystal-Diamond Film Heter- junction p-n Diode [J]. Chinese Journal of High Pressure Physics, 1999, 13(3): 169-172. (in Chinese) 张铁臣, 高春晓, 王成新, 等.立方氮化硼单晶-金刚石薄膜异质p-n结[J]. 高压物理学报, 1999, 13(3): 169-172. Olszna A, Muftah M, Soklowska A. The In-Flame Crystallization of a Metastable BN Form [J]. Diam Relat Mater, 1995, 4: 386-389. Olszna A, Konwerska-Hrabowska J, Lisicki M. Molecular Structure of E-BN [J]. Diam Relat Mater, 1997, 6: 617-620. ZHU Pin-wen, ZHAO Yong-nian. ZOU Guang-tian, et al. Synthesis of High-Pressure Phase of BN: E-BN, w-BN, c- BN by Physical Vapor Deposition Method [J]. Chinese Journal of High Pressure Physics, 2000, 14(2) : 111-113. (in Chinese) 朱品文, 赵永年, 邹广田, 等. 用气相沉积方法在低气压下制备BN的高压相E-BN、c-BN、w-BN [J]. 高压物理学报, 2000, 14(2): 111-113. -
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