Hg1-xCdxTe在高压下的结构、状态方程与相变

顾惠成; 陈良辰; 褚君浩; 鲍忠兴; 刘克岳; 王金义; 郑康立

doi:10.11858/gywlxb.2000.04.011

Hg1-xCdxTe在高压下的结构、状态方程与相变

doi: 10.11858/gywlxb.2000.04.011

1.
中国科学院物理研究所，北京 100080；
2.
中国科学院上海技术物理研究所红外物理国家重点实验室，上海 200083；
3.
中国科学院国际材料物理中心，辽宁沈阳 110015；
4.
华北光电研究所，北京 100015

详细信息

通讯作者:
顾惠成

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出版历程
- 收稿日期: 1999-12-09
- 修回日期: 2000-05-06
- 发布日期: 2000-12-05

Structures and the Equation of State of Hg1-xCdxTe under High Pressure

1.
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
2.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
3.
International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China;
4.
North China Research Institute of Electro-Optics, Beijing 100015, China

More Information

Corresponding author: GU Hui-Cheng

摘要

摘要: 利用X射线粉末衍射方法，在室温高压下观察到了Hg1-xCdxTe（x=0.19）的相变。实验是在DAC高压装置上完成的，压力从0逐步加至10.1 GPa。在常温常压下Hg1-xCdxTe（x=0.19）具有闪锌矿结构。从实验结果看到，在压力为3 GPa和6.8～8.3 GPa之间有两个结构相变存在。初步认为，后一个相变与Hg1-xCdxTe（x=0.19）的金属化有密切关系。通过计算，得到了它在相变前的状态方程，并且与二元HgTe化合物在相变规律上进行了比较。
- 晶体结构 /
- 状态方程 /
- 相变 /
- X射线衍射
Abstract: Phase transitions of Hg1-xCdxTe (x=0.19) were observed by X-ray powder diffract ion technique with a diamond anvil cell (DAC) at pressures up to 10.1 GPa. At ambient pressure Hg1-xCdxTe (x=0.19) has zinc-blended structure. Two phase transitions in Hg1-xCdxTe (x=0.19) we observed experimentally. The first appears at ～3 GPa, and the second between 6.8 and 8.3 GPa. The second phase transition is believed to be related with metallization of Hg1-xCdxTe (x=0.19). Based on our experimental results, its equation of state in the pressure range of 0~3 GPa was also obtained.
- crystal structure /
- equation of state /
- phase transition /
- X-ray diffraction

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参考文献(3)

鲍忠兴, 褚君浩, 柳翠霞, 等. Hg1-xCdxTe在髙压下的电学性质、状态方程与相变 [J]. 高压物理学报, 2000, 14(1): 28.

Nelmes R J, Memahon M I, Wright N G, et al. Structural Studies ofⅡ-Ⅵ Semiconductors at High Pressure [J]. J Phys Chem Solids, 1995, 56(3/4): 545-549.

Werner A, Hochheimer H D, Stnissner K, et al. High Pressure X-Ray Diffraction Studies on HgTe and HgS to 20 GPa [J]. Phys Rev B, 1983, 28(6): 3330-3334.

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