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摘要: 通过控制高压腔内的温度、压力梯度合成了粒径300~500 m的片状立方氮化硼(cBN)单晶体。通过在原料中掺杂及对合成晶体的真空高温扩散掺杂,获得了具有半导体导电性的立方氯化硼材料并测试了其V-A特性。Abstract: We synthesized flaky cBN crystals that the grade of which is about 300~500 m by method of controlling temperature and pressure gradient in synthesized cell. The cBN crystal material with semiconductor characteristic is obtained by mixing method in material and in the high temperature-vacuum diffusion process. At the same time its V-A characteristic curves were tested.
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Key words:
- synthesize /
- cBN /
- V-A characteristic curve
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Wentorf R H Jr. J Chem Phys, 1961, 34: 809. Taniguchi T, Tnaka J. Appl Phys Lett, 1993, 6: 62.
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