等离子体CVD生长金刚石薄膜中衬底负偏压增强成核机制

杨国伟

杨国伟. 等离子体CVD生长金刚石薄膜中衬底负偏压增强成核机制[J]. 高压物理学报, 1996, 10(2): 114-121 . doi: 10.11858/gywlxb.1996.02.006
引用本文: 杨国伟. 等离子体CVD生长金刚石薄膜中衬底负偏压增强成核机制[J]. 高压物理学报, 1996, 10(2): 114-121 . doi: 10.11858/gywlxb.1996.02.006
YANG Guo-Wei. The Mechanism of the Negative Bias-Enhanced Nucleation of Diamond[J]. Chinese Journal of High Pressure Physics, 1996, 10(2): 114-121 . doi: 10.11858/gywlxb.1996.02.006
Citation: YANG Guo-Wei. The Mechanism of the Negative Bias-Enhanced Nucleation of Diamond[J]. Chinese Journal of High Pressure Physics, 1996, 10(2): 114-121 . doi: 10.11858/gywlxb.1996.02.006

等离子体CVD生长金刚石薄膜中衬底负偏压增强成核机制

doi: 10.11858/gywlxb.1996.02.006
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    杨国伟

The Mechanism of the Negative Bias-Enhanced Nucleation of Diamond

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    Corresponding author: YANG Guo-Wei
  • 摘要: 提出了近年来实验发现的在等离子体化学气相沉积(PCVD)金刚石薄膜中衬底负偏压增强成核效应的理论模型,给出了偏压增强成核效应与沉积参数诸如反应压强和碳源浓度等的关系,解释了在负偏压增大时,反应压强和碳源浓度的变化对成核增强强度的影响,并且讨论了阈值负偏压问题。本模型得到的理论结果与文献中的实验结果基本一致。

     

  • Zhu W, Stoner B R, Williams B E, et al. Proc IEEE, 1991, 79: 621.
    Hirabayaski K, Tanguchi Y. Appl Phys Lett, 1988, 53: 1815.
    杨国伟. 高压物理学报, 1994, 8(3): 229.
    Yugo S, Kanai T, Kimura T, et al. Appl Phys Lett, 1991, 58: 1036.
    Stoner B R, Ma G M, Wolter S D, et al. Phys Rev B, 1992, 45: 11067.
    Stoner B R, Glass J T. Appl Phys Lett, 1992, 60: 698.
    Ojika S, Yamashita S, Kataoka K, et al. Jpn J Appl Phys, 1993, 32: L200.
    Gao C X, Zou G T, Jin Z S. Chin Phys Lett, 1994, 11: 317.
    Katoh M, Aoki M, Kawarada H. Jpn J Appl Phys, 1994, 33: L194.
    Grill A, Meyerson B S, Patel V V, et al. J Appl Phys, 1987, 61: 2874.
    Melton C E, Rudolph. J Chem Phys, 1967, 47: 1711.
    Harris S J, Goodwin D G. J Phys Chem, 1993, 97: 23.
    Winters H F, Horne D E. Surf Sci, 1971, 24: 587.
    Coburn J W, Winters H F. J Appl Phys, 1979, 50: 3189.
    Winters H W, Coburn J W, Chuang T J. J Vac Sci Technol, 1983, B1: 469.
    Wild C, Koidl P. Appl Phys Lett, 1989, 54: 505.
    Richards J. Vacuum, 1984, 34: 559.
    Field D, Klemperer D F, May P W, et al. J Appl Phys, 1991, 70: 82.
    Gat R, Angus J C. J Appl Phys, 1993, 74: 5981.
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出版历程
  • 收稿日期:  1995-02-28
  • 修回日期:  1995-12-07
  • 发布日期:  1996-06-05

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