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摘要: 在金刚石压砧装置上,采用我们建立的电阻测量方法,研究了半导体InP0.97As0.03、InP0.5As0.5、Ga0.76In0.24As和Ga0.24In0.76As在室温下、16 GPa内的电阻与压力的关系。工作中,对测量技术进行了一些改进,采用微机进行测量控制和数据记录。实验结果表明,这些样品在测量的压力范围内,均发生了金属化相变。它们的相变压力分别为:10.3、9.7、13.5~14.6和10~10.4 GPa左右。这些实验结果在过去发表的文章中未见报导过。Abstract: Resistance-pressure (R-p) relationships in InP0.97As0.03, InP0.5As0.5, Ga0.76In0.24As and Ga0.24In0.76As at room temperature at high pressure have been studied in a diamond anvil cell using resistance measurement. Experimental results indicate that these samples all undergo metallic transitions in the measured pressure range, and their transition pressures are about 10.3, 9.7, 13.5~14.6 and 10~10.4 GPa, respectively. Some improvements were made on the measurement techniques.
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Key words:
- semiconductor /
- metallic transition /
- resistance measurement
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