低压气相生长金刚石薄膜系统中衬底表面凹缺陷成核机制研究

The Nucleation Mechanism of Substrates Surface Defects in Low Pressure Vapor Deposition of Diamond Thin Films

摘要: 提出了金刚石在衬底表面凹缺陷内成核的理论，指出凹缺陷尺度对于金刚石成核有着决定性作用，合适的凹缺陷将使成核率达到最大。并且讨论了该理论对于试图通过控制衬底表面缺陷来控制金刚石成核密度等人工微结构设计研究的意义。
- 金刚石薄膜 /
- 凹缺陷 /
- 成核
Abstract: To promote diamond nucleation density, introduction of defects on the substrate surface is an effective method in low pressure vapor deposition of diamond thin film growth. However, little studies in this field have been made so far. Based on our experiments, we present in the paper the diamond nucleation mechanisms of the groove defects on the substrate surface. The size of the groove defects is of key importance for the diamond nucleation: An appropriate size of the groove defects can effectively promote the nucleation. Finally, we studied the significance of the theory in the controlling of diamond nucleation density via the surface defects on the substrate.
- Diamond thin film /
- groove defect /
- nucleation