The Preparation of Diamond Film with the Method of Electron Assisted Chemical Vapor Deposition
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摘要: 采用EACVD方法在Si衬底上制备出生长速率高的优质金刚石膜,其生长速率最大可达7 m/h,成膜范围40 mm,并对优质金刚石膜的生长特性进行了研究。Abstract: A high quality diamond film which has a high growth velocity has been synthesized on Si substrates by means of the electron assisted chemical vapor deposition method. The maximum growth velocity is 7 m/h and the growth areas of diamond film is 40 mm. The growth characteristics of the high quality diamond film were studied.
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Key words:
- electron assisted /
- chemical vapor deposion /
- diamond film
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Kamo M, et al. J Crystal Growth, 1983, 62: 642. Liou Y, et al. Appl Phys Lett, 1990, 56: 437.
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