A Dynamic Measurement Study of Resistance in Synthesis Process of CeTbO3 under High Pressure and High Temperature
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摘要: 在0.5 GPa、4.0 GPa的压力下，从室温到800 ℃的温度范围内测量了氧化物CeTbO3、单稀土氧化物Tb4O7、CeO2和摩尔比维4∶1配比的混合物CeO2+Tb4O7等的电阻随温度变化关系。对这四种物质均反映出电阻随温度增加而减小的半导体特征。在压力维0.5 GPa，温度高于600 ℃时发现了混合物CeO2+Tb4O7、氧化物Tb4O7中电阻变化的起伏。X射线衍射谱表明，对应这一电阻变化，在结构上出现了变化。结果分析表明，这一变化与Tb4+Tb3+的价态变化密切相联。Abstract: The resistance of oxides CeTbO3, CeO2, Tb4O7 and mixture CeO2+Tb4O7 (Ce∶Tb=1∶1) has been measured from room temperature to 800 ℃ at 4.0 GPa and 0.5 GPa. All of them show semiconducting character of resistance. The up-and-down changes of the mixture and Tb4O7 have been found at 0.5 GPa above 600 ℃. X-ray diffraction shows that corresponding to this change, there is a change on the structure which might closely relate to the valence fluctuation from Tb4+ to Tb3+.
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