CdSe在高压下的电学性质及相变

贺春元 高春晓 李明 郝爱民 黄晓伟 于翠铃 张冬梅 王月 邹广田

贺春元, 高春晓, 李明, 郝爱民, 黄晓伟, 于翠铃, 张冬梅, 王月, 邹广田. CdSe在高压下的电学性质及相变[J]. 高压物理学报, 2008, 22(1): 39-42 . doi: 10.11858/gywlxb.2008.01.009
引用本文: 贺春元, 高春晓, 李明, 郝爱民, 黄晓伟, 于翠铃, 张冬梅, 王月, 邹广田. CdSe在高压下的电学性质及相变[J]. 高压物理学报, 2008, 22(1): 39-42 . doi: 10.11858/gywlxb.2008.01.009
HE Chun-Yuan, GAO Chun-Xiao, LI Ming, HAO Ai-Min, HUANG Xiao-Wei, YU Cui-Ling, ZHANG Dong-Mei, WANG Yue, ZOU Guang-Tian. Electrical Property and Phase Transition of CdSe under High Pressure[J]. Chinese Journal of High Pressure Physics, 2008, 22(1): 39-42 . doi: 10.11858/gywlxb.2008.01.009
Citation: HE Chun-Yuan, GAO Chun-Xiao, LI Ming, HAO Ai-Min, HUANG Xiao-Wei, YU Cui-Ling, ZHANG Dong-Mei, WANG Yue, ZOU Guang-Tian. Electrical Property and Phase Transition of CdSe under High Pressure[J]. Chinese Journal of High Pressure Physics, 2008, 22(1): 39-42 . doi: 10.11858/gywlxb.2008.01.009

CdSe在高压下的电学性质及相变

doi: 10.11858/gywlxb.2008.01.009
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    通讯作者:

    高春晓

Electrical Property and Phase Transition of CdSe under High Pressure

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    Corresponding author: GAO Chun-Xiao
  • 摘要: 利用在金刚石压砧上集成的微电路,原位测量了CdSe多晶粉末在温度为300~450 K、压力达到23 GPa时电阻率随温度和压力的变化关系。实验结果表明:在加压过程中,电阻率在2.6 GPa压力时出现的异常改变,对应着CdSe从纤锌矿向岩盐矿结构的转变,而在6.0、9.8、17.0 GPa等压力处出现的电阻率异常,则是由CdSe中的电子结构的变化所引起的;在卸压过程中,只在约14.0和3.0 GPa压力下观察到了两个电阻率异常点。通过对电阻率随压力变化曲线的模拟,得出了CdSe高压相的带隙随压力的变化关系,据此预测CdSe金属化的压力应在70~100 GPa之间。变温实验结果表明,在实验的温度和压力范围内,CdSe的电阻率均随温度的增加而升高。

     

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出版历程
  • 收稿日期:  2007-02-26
  • 修回日期:  2007-05-28
  • 发布日期:  2008-03-05

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