高压合成La填充型CoSb3方钴矿热电材料及其电输运性能

姜一平; 贾晓鹏; 马红安; 宿太超; 董楠; 邓乐

doi:10.11858/gywlxb.2009.02.002

高压合成La填充型CoSb3方钴矿热电材料及其电输运性能

doi: 10.11858/gywlxb.2009.02.002

1.
吉林大学超硬材料国家重点实验室，吉林长春 130012；
2.
北华大学物理学院，吉林吉林 132013

详细信息

通讯作者:
马红安

计量
- 文章访问数: 11399
- HTML全文浏览量: 667
- PDF下载量: 970
出版历程
- 收稿日期: 2008-07-14
- 修回日期: 2008-10-15
- 发布日期: 2009-04-15

High Pressure Synthesis and Electric Transport Properties of La Filled CoSb3 Skutterudite Thermoelectric Materials

1.
National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
2.
Department of physics, Beihua University, Jilin 132013, China

More Information

Corresponding author: MA Hong-An

摘要

摘要: 采用高温高压手段，在压力3.5 GPa、温度900 K的条件下，成功合成出La填充型方钴矿热电材料LaxCo4Sb12（0x1.0），系统地研究了样品的晶体结构和电输运性能随填充分数x的变化关系。研究结果表明：在最大填充分数x为0～1.0的范围内，随着La填充分数的增加，样品的晶胞常数稍有增大，晶体结构仍为典型的方钴矿结构，没有La杂质相出现。室温下样品的电输运性能测试结果表明：La填充型方钴矿为p型半导体；样品的电阻率和Seebeck系数随La含量的增加均呈现出先增加后逐渐降低的趋势；当填充分数x为0.3时，样品的Seebeck系数和电阻率均达到了最大值；功率因子在x＝0.5时达到了最大值。
- La /
- 方钴矿 /
- 高温高压 /
- 热电材料
Abstract: La-filled skutterudite compounds LaxCo4Sb12 (0＜x1.0) were successfully synthesized at 3.5 GPa and 900 K. The X-ray diffraction results indicate that all synthesized samples exist as a single phase with a crystal structure of CoSb3. The composition-dependent electric transport properties of La-filled CoSb3 have been studied at room temperature. The lattice parameters of the samples increase gradually with the increasing of La content. No La phase is found in the range of x from 0.1 to 1.0. The La-filled skutterudite is p type semiconductor. The electrical resistivity and Seebeck coefficient increase firstly with the increasing of La content and then decrease. When the La content x is 0.3, the electrical resistivity and Seebeck coefficient both reach the maximum value. The maximum power factor is obtained when the La content x is 0.5.
- La /
- skutterudite /
- high temperature and high pressure /
- thermoelectric material

HTML全文

参考文献(12)

Sales B C. Thermoelectric Materials-Smaller Is Cooler [J]. Science, 2002, 259(5558): 1248-1249.

Sales B C, Mandrus D, Williams R K. Filled Skutterudite Antiminides: A New Class of Thermoelectric Materials [J]. Science, 1996, 272(5266): 1325-1328.

Slack G A. New Materials and Performance Limits for Thermoelectric Cooling [A]//Rowe D M. CRC Handbook of Thermoelectrics [M]. CRC Press, 1995: 407-440.

Sales B C, Mandrus D, Chakoumakos B C, et al. Filled Skutterudite Antimonides: Electron-Crystals Phonon-Glasses [J]. Phys Rev B, 1997, 56(23): 15081-15089.

Chen B X, Xu J H, Ucher C, et al. Low-Temperature Transport Properties of the Filled Skutterudites CexFe4-xCoxSb12 [J]. Phys Rev B, 1997, 55(3): 1476-1480.

Nolas G S, Cohn J L, Slack G A. Effect of Partial Void Filling on the Lattice Thermal Conductivity of Skutterudites [J]. Phys Rev B, 1998, 58(1): 164-170.

Nolas G S, Morelli D T, Tritt T M. Skutterudites: A Phonon-Glass-Electron Crystal Approach to Advanced Thermoelectric Energy Conversion Applications [J]. Annual Review of Matetials Science, 1999, 29: 89-116.

Zhu P W, Imai Y, Isoda Y, et al. Electrical Transport and Thermoelectric Properties of PbTe Prepared by HPHT [J]. Materials Transactions, 2004, 45(11): 3102-3105.

Su T C, Zhu P W, Ma H A, et al. Electrical Transport and Thermoelectric Properties of PbTe Doped with Sb2Te3 Prepared by High-Pressure and High-Temperature [J]. J Alloys Comp, 2006, 422(1): 328-331.

Gene Y, Heike S, Johnson D C. Calorimetric Study of the Nucleation of LaxCo4Sb12 Prepared from Modulated Elemental Reactants [J]. Thermochimica Acta, 2002, 388(1-2): 151-158.

Itskevich E S, Kashirskay L M, Kraidenov V F. Anomalies in the Low-Temperature Thermoelectric Power of p-Bi2Te3 and Te Associated with Topological Electronic Transitions under Pressure [J]. Semiconductors, 1997, 31(3): 276-278.

Polvani D A, Meng J F, Chandra S N V, et al. Large Improvement in Thermoelectric Properties in Pressure Tuned p-Type Sb1. 5Bi0. 5Te3 [J]. Chem Matter, 2001, 13(6): 2068-2071.

施引文献

资源附件(0)

访问统计