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Chinese Journal of High Pressure Physics  > 2012  >  26(1): 27-32.
LI Ming, YANG Jie, YANG Wu-Ming, WANG Hui-Xin, LI Li-Xin, GAO Chun-Xiao. An in Situ Electrical Conductivity Measurement System in Diamond Anvil Cell[J]. Chinese Journal of High Pressure Physics, 2012, 26(1): 27-32. doi: 10.11858/gywlxb.2012.01.004
Citation: LI Ming, YANG Jie, YANG Wu-Ming, WANG Hui-Xin, LI Li-Xin, GAO Chun-Xiao. An in Situ Electrical Conductivity Measurement System in Diamond Anvil Cell[J]. Chinese Journal of High Pressure Physics, 2012, 26(1): 27-32. doi: 10.11858/gywlxb.2012.01.004
shu

An in Situ Electrical Conductivity Measurement System in Diamond Anvil Cell

doi: 10.11858/gywlxb.2012.01.004
  • 1.

    Department of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000, China;

  • 2.

    National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;

  • 3.

    Fundamental Department, Aviation University of Air Force, Changchun 130012, China

  • Received Date: 07 Jul 2010
  • Rev Recd Date: 06 Jan 2011
  • Issue Publish Date: 15 Feb 2012
    Abstract
  • In situ resistance measurement in a diamond anvil cell under high pressure and high temperature will be restricted by the thermal insulation. If the ordinary powder heat insulating material is used, it is difficult to introduce the electrode and measure resistance accurately. Here the in situ resistance measurement under high pressure and high temperature is performed successfully using a sputtered alumina film coated onto the surface of the top anvil plate as an insulation layer and a sputtered molybdenum film used as an electrode. With this device, the electrical conductivity of iron magnesium silicate [(Mg0.875,Fe0.125)2SiO4] under 31-35 GPa and 1 500-3 400 K is obtained. It is found that the activation energy increases with pressure, and the activation volume and activation energy are significantly reduced compared to that under the pressure and temperature lower than 15 GPa and 1 200 K.

     

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