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Chinese Journal of High Pressure Physics  > 2004  >  18(1): 83-89 .
WANG Chuan-Xin, WANG Jian-Hua, MAN Wei-Dong, MA Zhi-Bin, WANG Sheng-Gao, KANG Zhi-Cheng. Effects of W Diffusion Barrier Layer for Diamond Coatings Deposited on WC-Co Substrates[J]. Chinese Journal of High Pressure Physics, 2004, 18(1): 83-89 . doi: 10.11858/gywlxb.2004.01.015
Citation: WANG Chuan-Xin, WANG Jian-Hua, MAN Wei-Dong, MA Zhi-Bin, WANG Sheng-Gao, KANG Zhi-Cheng. Effects of W Diffusion Barrier Layer for Diamond Coatings Deposited on WC-Co Substrates[J]. Chinese Journal of High Pressure Physics, 2004, 18(1): 83-89 . doi: 10.11858/gywlxb.2004.01.015
shu

Effects of W Diffusion Barrier Layer for Diamond Coatings Deposited on WC-Co Substrates

doi: 10.11858/gywlxb.2004.01.015
  • 1.

    Province Key Laboratory of Plasma Chemical & Advanced Materials, Wuhan Institute of Chemical Technology, Wuhan 430073, China;

  • 2.

    Institute of Plasma Physics the Chinese Academy of Sciences, Hefei 230031, China

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  • Corresponding author: WANG Chuan-Xin
  • Received Date: 27 Mar 2003
  • Rev Recd Date: 15 Oct 2003
  • Issue Publish Date: 05 Mar 2004
    Abstract
  • Two different W interlay/substrate bonding interfaces for the adhesion of diamond film deposited on WC-Co substrate were investigated using bias enhancing nucleation method, in microwave plasma enhanced chemical vapor deposition (MWCVD) device. The results indicate that hydrogen plasma decarburization, W interlayer sputtering, recarburization with negative biasing induce chemical reaction bonding interface formed between the W interlayer and the substrate. Recarburized W interlayer in the initial diamond deposition strongly adhere to WC grains on the surface of WC-Co substrate, and consequently improved the adhesion of diamond film on WC-Co substrate. This pretreatment improved the adhesion of diamond film more obvious, compared with sputtering W interlayer directly on the substrate, in which physical bonding interlayer formed. Carburization with high negative biasing can improve the roughness of the substrate surface, and consequently improve the effect of mechanical interlock. The nucleation density was increased by negative biasing and therefore improved the contact area between the diamond film and the substrate, consequently improved the adhesion of diamond film on WC-Co substrate.

     

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