Cd1-xZnxTe Electrical Properties, the Equation of State and Phase Transitions under High Pressure

Resistance-and capacitance-pressure relationships for Cd1-xZnxTe (x=0.04) at room temperature and in the pressure range up to 17 GPa were measured in a diamond anvil cell. Experimental results indicate that Cd1-xZnxTe (x=0.04) undergoes two electronic structure transitions at about 3.1 GPa and 5 GPa, and two crystal structure transitions at above 3.1 GPa and about 5.7 GPa. p-V relationship for Cd1-xZnxTe (x=0.04) at room temperature and in the pressure range up to 4.5 GPa was also obtained using a piston-cylinder type device. Experimental results show that a phase transition in Cd1-xZnxTe (x=0.04) occurs at about 3.8 GPa. Its equations of state before and after the phase transition, Grneisen parameter 0, bulk modulus B0 and the first order pressure derivative B0 of B0 are also given.