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Chinese Journal of High Pressure Physics  > 1992  >  6(1): 1-6 .
ZHENG Zhou. The Effect of Boron Additives on the Oxidation Rate of Synthetic Diamond Monocrystals[J]. Chinese Journal of High Pressure Physics, 1992, 6(1): 1-6 . doi: 10.11858/gywlxb.1992.01.001
Citation: ZHENG Zhou. The Effect of Boron Additives on the Oxidation Rate of Synthetic Diamond Monocrystals[J]. Chinese Journal of High Pressure Physics, 1992, 6(1): 1-6 . doi: 10.11858/gywlxb.1992.01.001
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The Effect of Boron Additives on the Oxidation Rate of Synthetic Diamond Monocrystals

doi: 10.11858/gywlxb.1992.01.001

  • Zhengzhou Research Institute for Abrasives & Grinding, Ministry of Machinery & Electronics Industry, Zhengzhou 450007, China

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  • Corresponding author: ZHENG Zhou
  • Received Date: 29 Sep 1991
  • Rev Recd Date: 13 Dec 1991
  • Issue Publish Date: 05 Mar 1992
    Abstract
  • By means of molten KNO3 oxidation experiments were conducted on the discs cut from a large synthetic diamond monocrystal. The relative depth of oxidation formed at sector boundaries on oxidized (110) cross-section of the diamond monocrystals (boron-doped and non-boron-doped) were measured with a two-beam interference microscope. The relative oxidation rates between growth sectors were calculated, and were connected with the amount of boron additive in these sectors.

     

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    • References(5)
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    人工晶体研究所. 人造金刚石, 1977, 2: 11-21.
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    芶清泉. 人造金刚石, 1977, (2): 26-36.
    郑周, 神田久生, 大さわ俊一等. 日本第29回高あ讨论会こう演要旨集. 第29回高压讨论会准备委员会: 庆应义塾大学, 1988: 340-341.
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