Investigations on the Problem of Interface Binding in the Sintering System of Diamond at High Pressure and a New Type Polycrystalline Diamond

Investigations were made on the theory and experiments relating to the sintering mechanism of diamond with dopant at high pressure. In considerating of the doping and dimension effects a universal equation of Laplace second law and the interface binding characteristic equation in the sintering system of diamond were obtained. Some results of the experiment and analysis on the behaviour of diamond and dopant at high pressure were reported. Based on those results, a new type polycrystalline diamond with a special interface structure was obtained. It shows its superiority in the application to the wiredrawing die, especially the end product wiredrawing die. The uses of the diamond are being extended.