碳化硅/钛合金穿插式TPMS结构的抗侵彻性能数值模拟研究

周浩天 李依男 覃彬 孟钰权 宋卫东

周浩天, 李依男, 覃彬, 孟钰权, 宋卫东. 碳化硅/钛合金穿插式TPMS结构的抗侵彻性能数值模拟研究[J]. 高压物理学报, 2026, 40(7): 070110. doi: 10.11858/gywlxb.20261068
引用本文: 周浩天, 李依男, 覃彬, 孟钰权, 宋卫东. 碳化硅/钛合金穿插式TPMS结构的抗侵彻性能数值模拟研究[J]. 高压物理学报, 2026, 40(7): 070110. doi: 10.11858/gywlxb.20261068
ZHOU Haotian, LI Yinan, QIN Bin, MENG Yuquan, SONG Weidong. Numerical Simulation on Anti-Penetration Performance of SiC/Ti-Alloy Interpenetrating TPMS Structures[J]. Chinese Journal of High Pressure Physics, 2026, 40(7): 070110. doi: 10.11858/gywlxb.20261068
Citation: ZHOU Haotian, LI Yinan, QIN Bin, MENG Yuquan, SONG Weidong. Numerical Simulation on Anti-Penetration Performance of SiC/Ti-Alloy Interpenetrating TPMS Structures[J]. Chinese Journal of High Pressure Physics, 2026, 40(7): 070110. doi: 10.11858/gywlxb.20261068

碳化硅/钛合金穿插式TPMS结构的抗侵彻性能数值模拟研究

doi: 10.11858/gywlxb.20261068
基金项目: 国家自然科学基金(12572429,12172056,12372349)
详细信息
    作者简介:

    周浩天(2004-),男,本科,主要从事冲击动力学研究. E-mail:17602437047@163.com

    通讯作者:

    宋卫东(1975-),男,博士,教授,主要从事材料与结构的冲击动力学研究. E-mail:swdgh@bit.edu.cn

  • 中图分类号: O385; O521.9

Numerical Simulation on Anti-Penetration Performance of SiC/Ti-Alloy Interpenetrating TPMS Structures

  • 摘要: 陶瓷/金属复合材料作为一种具有轻量化、高比强度、高吸能效率特性的抗冲击结构,被广泛应用于军事及航空航天领域。随着3D打印技术的发展,制造三周期极小曲面(triply periodic minimal surface,TPMS)的复杂点阵结构成为可能。设计了一种碳化硅(SiC)陶瓷与钛合金(TC4)复合的穿插式TPMS防弹结构,针对单弹侵彻与双弹侵彻工况,利用ABAQUS开展了数值模拟研究,对比了该结构与纯SiC的损伤破坏模式、侵彻深度和弹道极限速度。数值模拟结果表明:不同穿插式TPMS结构呈现出不同的损伤破坏模式,三维拓扑结构限制了裂纹在陶瓷内部的扩散,使靶板整体损伤弱于纯SiC靶;第2发弹丸侵彻造成的损伤沿首发弹丸侵彻区域继续发展,侵彻深度增加;相较于纯SiC靶板,3种穿插式TPMS靶板的侵彻深度更浅,弹道极限速度更高;当来袭子弹能够击穿靶板时,P型结构对低速弹的抗弹性能更优,D型结构对高速弹的抗弹性能更优。研究结果表明,等面密度下穿插式TPMS靶板相较于纯SiC具有更优的抗弹性能。研究结果可为新型轻质陶瓷装甲设计提供技术支撑和理论依据。

     

  • 图  3种穿插式TPMS结构的1/4模型构建示意图

    Figure  1.  Schematic diagram of 1/4 model construction for three interpenetrating TPMS structures

    图  2种侵彻模型

    Figure  2.  Two types of penetration models

    图  侵彻模型和侵彻过程

    Figure  3.  Penetration model and penetration process

    图  应力云图视角示意图

    Figure  4.  Schematic diagram of the stress contour plot

    图  纯SiC在单弹侵彻/双弹侵彻工况下的应力云图

    Figure  5.  Stress contours of the pure SiC under single-projectile and double-projectile penetration conditions

    图  D型TPMS穿插靶在单弹侵彻/双弹侵彻工况下的应力云图

    Figure  6.  Stress contours of D-shaped TPMS interpenetrating target under single-projectile and double-projectile penetration conditions

    图  N型TPMS穿插靶在单弹侵彻/双弹侵彻工况下的应力云图

    Figure  7.  Stress contours of N-shaped TPMS interpenetrating target under single-projectile and two-projectile penetration conditions

    图  P型TPMS穿插靶在单弹侵彻/双弹侵彻工况下的应力云图

    Figure  8.  Stress contours of P-shaped TPMS interpenetrating target under single-projectile and double-projectile penetration conditions

    图  单弹以350 m/s速度侵彻不同结构的侵深对比

    Figure  9.  Comparison of penetration depth for different structures under single projectile at 350 m/s

    图  10  双弹以350 m/s速度侵彻不同结构的侵深对比

    Figure  10.  Comparison of penetration depth for different structures under double projectiles at 350 m/s

    图  11  4种靶板的弹道极限速度拟合曲线

    Figure  11.  Fitting curves of the ballistic limit velocity for four target plates

    表  1  SiC陶瓷的JH-2模型参数[41]

    Table  1.   JH-2 model parameters for silicon carbide ceramics[41]

    ρ/(kg·m−3) G/GPa A B C M N σHEL/GPa d1 d2 K1/GPa K2/GPa K3/GPa
    3 215 193 0.96 0.35 0.009 1 0.65 11.7 0.48 0.48 220 361 0
    下载: 导出CSV

    表  2  T12A钢与TC4合金的Johnson-Cook模型参数

    Table  2.   Johnson-Cook model parameters for T12A steel and TC4 alloy

    Material ρ/(kg·m−3) E/GPa A0/MPa B0/MPa N0 M0
    T12A 7 850 210 1 540 477 0.16 1.0
    TC4 4400 110 1 030 952 0.40 0.8
    Material D1 D2 D3 D4 D5 $\dot{\varepsilon}_0/{\rm{s}}^{-1}$
    T12A 1.4 0 0 0 0 1.0
    TC4 −0.2 0.25 0.2 0.014 3.87 1.0
    下载: 导出CSV

    表  3  3种穿插式TPMS结构的拟合参数

    Table  3.   Fitting parameters of three interpenetrating TPMS structures

    Target type a P v50/(m·s–1)
    D 0.75 1.69 445.69
    N 0.72 1.80 443.69
    P 0.82 1.83 448.31
    下载: 导出CSV
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出版历程
  • 收稿日期:  2026-03-30
  • 修回日期:  2026-06-01
  • 录用日期:  2026-06-15
  • 网络出版日期:  2026-06-04
  • 刊出日期:  2026-07-05

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    返回文章
    返回