高压下LaZn1–δSb2的结构及输运性质

项浙宁 李庆 闻海虎

项浙宁, 李庆, 闻海虎. 高压下LaZn1–δSb2的结构及输运性质[J]. 高压物理学报, 2026, 40(4): 040101. doi: 10.11858/gywlxb.20261005
引用本文: 项浙宁, 李庆, 闻海虎. 高压下LaZn1–δSb2的结构及输运性质[J]. 高压物理学报, 2026, 40(4): 040101. doi: 10.11858/gywlxb.20261005
XIANG Zhening, LI Qing, WEN Haihu. Crystal Structure and Transport Properties of LaZn1–δSb2 under Pressure[J]. Chinese Journal of High Pressure Physics, 2026, 40(4): 040101. doi: 10.11858/gywlxb.20261005
Citation: XIANG Zhening, LI Qing, WEN Haihu. Crystal Structure and Transport Properties of LaZn1–δSb2 under Pressure[J]. Chinese Journal of High Pressure Physics, 2026, 40(4): 040101. doi: 10.11858/gywlxb.20261005

高压下LaZn1–δSb2的结构及输运性质

doi: 10.11858/gywlxb.20261005
基金项目: 国家自然科学基金(12574145, 12434004, 11927809, 12061131001)
详细信息
    作者简介:

    项浙宁(2001-),男,博士研究生,主要从事高压下超导材料的输运测量和物理性质研究. E-mail:xiangzhening@smail.nju.edu.cn

    通讯作者:

    李 庆(1991-),男,博士,助理教授,主要从事新型超导材料探索和压力下的性质调控研究. E-mail:qingli@nju.edu.cn

    闻海虎(1964-),男,博士,教授,主要从事新型超导材料的探索合成、高温超导材料的超导机理和超导体磁通动力学研究. E-mail:hhwen@nju.edu.cn

  • 中图分类号: O521.2

Crystal Structure and Transport Properties of LaZn1–δSb2 under Pressure

  • 摘要: 在新超导材料的探索中,某些特定的结构单元被认为对超导的产生至关重要,如铜氧和铁基高温超导体中的CuO2面和Fe-As层等。为此,研究了具有Zn-Sb层的锌基112型LaZn1–δSb2在常压和高压下的结构和输运性质。研究发现:LaZn1–δSb2在常压下具有四方结构,并存在一定的Zn空位;其低温物理性质表现出顺磁金属行为,具有一定的各向异性和正磁阻现象;同时,空穴型霍尔系数随温度变化明显,表明该材料的输运行为由多带效应主导。在高压下,LaZn1–δSb2依然维持四方结构,但是体积被压缩超过25%;与此同时,高压下的绝对电阻值以及剩余电阻比均随压力的升高先减小后增大。进一步拟合发现,压力下LaZn1–δSb2的输运行为依然由电子-声子散射主导,且几乎不随压力变化。在所测试的最高达50.9 GPa的压力下,没有观测到2 K以上的超导现象;LaZn1–δSb2中超导电性的缺失可能与Zn空位导致的晶格缺陷有关。该研究结果可为探索同类结构化合物中的新型超导电性提供有意义的参考。

     

  • 图  LaZn1–δSb2的晶体结构示意图

    Figure  1.  Schematic diagram of the crystal structure of LaZn1–δSb2

    图  LaZn1–δSb2单晶照片

    Figure  2.  Photo of LaZn1–δSb2 single crystals

    图  (a) LaZn1–δSb2的典型EDS(插图表格为各元素的原子分数);(b) 单晶样品的 XRD谱(最大自然解离晶面为 ab 面);(c) 外加磁场为 1 T时测得的χ-T曲线(红色实线为居里-外斯拟合曲线)

    Figure  3.  (a) Typical EDS of LaZn1–δSb2 (Inset shows the atomic concentration of different elements.); (b) XRD pattern of the single crystal, showing that the largest natural face is ab-plane; (c) temperature dependence of magnetic susceptibility (χ-T) curve measured with an external field of 1 T (The solid red line is the Curie-Weiss fitting line.)

    图  (a) 电流沿不同方向时LaZn1–δSb2在2~300 K温度范围内的归一化电阻率-温度依赖关系(ρ/ρ300 K-T),(b) 不同温度下磁阻的磁场依赖关系曲线(在 9 T 磁场和 2 K 温度下观察到较大(38%)的正磁电阻效应),(c) 不同温度下的霍尔电阻率与磁场的关系曲线,(d) 常压下霍尔系数的温度依赖关系(RH-T

    Figure  4.  (a) Temperature dependence of normalized resistance (ρ/ρ300 K-T) of LaZn1–δSb2 from 2 K to 300 K with current along different directions; (b) magnetic field-dependent magnetoresistance (MR) at different temperatures, and a large positive magnetoresistance effect (38%) is observed at 9 T and 2 K; (c) the Hall resistivity versus magnetic field at selected temperatures; (d) temperature dependence of Hall coefficient (RH-T) at ambient pressure

    图  (a) 最高至52.6 GPa时不同压力下LaZn1–δSb2的同步辐射XRD谱,(b) 晶格常数的压力依赖关系,(c) 计算得到的LaZn1–δSb2晶胞体积与压力的关系曲线(红色实线为三阶 B-M 拟合曲线)

    Figure  5.  (a) XRD patterns of LaZn1–δSb2 collected at different pressures up to 52.6 GPa; (b) pressure dependence of lattice constants; (c) the derived cell volume as a function of pressure for LaZn1–δSb2 (The solid red line is the third-order B-M fitting curve.)

    图  LaZn1–δSb2在(a) 2.7 GPa和(b) 52.6 GPa下的XRD谱Rietveld 精修结果(所有曲线都可以用与常压结构相同的四方结构(空间群 P4/nmm)进行拟合)

    Figure  6.  Rietveld refinement XRD patterns of LaZn1–δSb2 at (a) 2.7 GPa and (b) 52.6 GPa (All the curves can be fitted using the same space group (P4/nmm) as that of the ambient pressure structure.)

    图  (a)~(b) 最高至50.9 GPa时不同压力下LaZn1–δSb2的电阻-温度(R-T)依赖关系曲线,(c) 不同压力下 LaZn1–δSb2的归一化电阻-温度(R/R300 K-T)曲线(插图为 LaZn1–δSb2R300 K/R2 K随压力的变化曲线),(d) 温度项的幂指数n随压力的演变规律(采用$ R \left(T\right)={R }_{0}+A{T}^{n} $对 2~50 K 温度区间内不同压力下的R-T 曲线进行拟合的结果)

    Figure  7.  (a)–(b) Temperature dependence of resistance (R-T) curves for LaZn1–δSb2 under various pressures up to 50.9 GPa; (c) normalized R-T curves of LaZn1–δSb2 at selected pressures (Inset shows the pressure dependent R300 K/R2 K of LaZn1–δSb2.); (d) the evolution of the n value with pressure (The formula $ R\left(T\right)={R }_{0}+A{T}^{n} $ was used to fitting the R-T curves at various pressures in the temperature region from 2 to 50 K.)

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出版历程
  • 收稿日期:  2026-01-08
  • 修回日期:  2026-02-08
  • 刊出日期:  2026-04-05

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