Electrical Transport of Pressure-Induced Magnetic Transition in YbMnBi2
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摘要: 在高压条件下对拓扑半金属YbMnBi2开展了系统的电输运和拉曼光谱测量。电输运结果表明，其电阻-温度关系随压力升高发生显著变化，并在16.8 GPa以上出现负磁阻，至30.1 GPa时观测到具有清晰磁滞回线的反常霍尔效应。结合电输运异常与相同压力区间内拉曼光谱的连续变化，结果表明，高压诱导形成了具有净磁矩的磁有序态。通过系统分析电阻-温度曲线形状、磁阻符号及霍尔行为随压力的演变规律，揭示了压力对YbMnBi2中磁有序行为与拓扑电子态协同调控的作用机制，为该体系在自旋相关电子学领域中的潜在应用提供了新的实验依据。Abstract: In this work, we performed systematic high-pressure electrical transport and Raman spectroscopy measurements on the topological semimetal YbMnBi2. The transport results reveal a pronounced evolution of the resistivity-temperature behavior with increasing pressure. A negative magnetoresistance emerges above 16.8 GPa, and a clear anomalous Hall effect characterized by a hysteretic Hall resistivity loop is observed at higher pressures around 30.1 GPa. These transport anomalies, together with the continuous evolution of the Raman spectra in the corresponding pressure range, indicate the formation of a pressure-induced magnetic ordered state with a net magnetic moment component. By systematically analyzing the pressure-dependent evolution of the resistivity-temperature characteristics, magnetoresistance behavior, and Hall effect, this work demonstrates the cooperative tuning of magnetic ordering and topological electronic states in YbMnBi2 under pressure. Our results provide new experimental insight into pressure-controlled magnetic and transport properties in topological semimetals and highlight their potential relevance for spin-related electronic applications.
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图 1 常压下YbMnBi2的表征：(a) 通过单晶XRD精修确定的YbMnBi2晶体结构，(b) YbMnBi2 倒空间(hk0)平面的衍射图案，(c) 实验与计算的XRD强度对比（证实结构精修质量良好），(d) YbMnBi2单晶的EDS元素分布
Figure 1. Characterization of YbMnBi2 at ambient pressure: (a) crystal structure of YbMnBi2 determined by single-crystal XRD refinement; (b) diffraction pattern of YbMnBi2 on the (hk0) plane in reciprocal space; (c) comparison between observed and calculated XRD intensities, confirming structural refinement quality; (d) EDS elemental mapping of YbMnBi2 single crystal
图 2 高压下YbMnBi2样品的电输运测量：(a)在10.0～31.9 GPa下的R-T曲线（插图为10.0 GPa以下不同压力条件下的R-T曲线），(b) R-T曲线的一阶微分dR/dT（插图显示了Tt的选取方法），(c) dR/dT的峰值对应的温度Ts与转变温度Tt，(d)不同温度下电阻随压力的变化
Figure 2. Electrical transport measurements of YbMnBi2 under high pressure: (a) resistance-temperature (R-T) curves from 10.0 GPa to 31.9 GPa (Inset: temperature-dependent resistance of YbMnBi2 under pressures below 10.0 GPa); (b) first-order derivative (dR/dT) of the R-T curves (Inset: method for determining the transition temperature Tt.); (c) the temperature Ts corresponding to the peak in dR/dT and transition temperature Tt as a function of pressure; (d) pressure dependence of resistance at selected temperatures
图 3 YbMnBi2样品的纵向电阻Rxx：(a) 2 K时不同压力下Rxx随磁场强度H的变化（为便于观察变化趋势，用瀑布图表示实验数据），(b) 2 K时不同压力下RM随磁场强度H的变化，(c) 2 K、0和9 T时不同压力下的纵向电阻（左轴）以及2 K、9 T时的磁电阻RM，(d) 31.9 GPa下的磁电阻随磁场的变化曲线
Figure 3. Longitudinal resistance (Rxx) measurements of YbMnBi2: (a) magnetic field dependence of Rxx at 2 K under various pressures (The data are vertically offset for clarity.); (b) magnetic field dependence of the magnetoresistance (RM) at 2 K under various pressures; (c) resistance at 2 K under 0 and 9 T at different pressures (left axis) and the RM at 2 K and 9 T (right axis); (d) RM as a function of magnetic field at 31.9 GPa
图 4 YbMnBi2样品的霍尔电阻Rxy测量：(a) 10.0～31.9 GPa压力下Rxy随磁场强度H的变化曲线，(b) 6.8 GPa、不同温度下Rxy随H的变化回线（圆形和三角形数据点分别代表正向与反向磁场扫描过程，插图为−1～1 T区间Rxy-H曲线放大图），(c) 26.1、27.3、30.2和31.9 GPa压力下Rxy随H的变化（瀑布图），(d) 31.9 GPa下Rxy随H变化的磁滞回线（瀑布图）
Figure 4. Hall resistance (Rxy) measurements of YbMnBi2: (a) Rxy as a function of magnetic field H from 10.0 GPa to 31.9 GPa; (b) Hall loops at 6.8 GPa measured at different temperatures (The circular and triangular data points represent the forward and reverse magnetic field sweep processes, respectively. Inset: magnified view from −1 T to 1 T.); (c) Rxy versus H at 26.1, 27.3, 30.2, and 31.9 GPa (The curves are offset for clarity.); (d) hysteresis loop of Rxy versus H at 31.9 GPa (The data are vertically offset.)
图 5 高压下YbMnBi2的拉曼散射测量：(a) 不同压力下YbMnBi2单晶样品的拉曼谱，(b) 拉曼散射峰位随压力的变化（为联合比对各峰的波数变化，对峰3的波数做减半处理），(c) 峰1与峰2的强度比（I1/I2）随压力的变化
Figure 5. Raman scattering measurements of YbMnBi2 under high pressure: (a) Raman spectra of YbMnBi2 single crystal under different pressures; (b) pressure dependence of the Raman mode frequencies (For a combined comparison, the frequency of peak 3 is displayed at half its actual value.); (c) pressure dependence of the intensity ratio between peak 1 and peak 2 (I1/I2)
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