Simulation Study on Hard X-Ray Detection Efficiency for Microchannel Plate
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摘要: 为提升硬X射线的探测效率,优化了微通道板对硬X射线响应效率的影响模型,在模型中充分考虑了微通道板多种材料参数、结构参数以及微通道板基底材料原子壳层间相互串扰等因素的影响。在此模型的基础上,分析了微通道板的基底材质、通道直径、通道间壁厚、通道板厚度等参数对其探测效率的影响。基于现有技术条件,给出了微通道板各参数的最优组合及相应的探测效率,结果表明,其对50~200 keV能段硬X射线的探测效率可以达到45%以上。Abstract: An optimized influence model of the microchannel plate on the response efficiency of hard X-rays was developed to improve the detection efficiency of hard X-rays. This model incorporates relevant material and structural parameters of the MCP, and further accounts for the crosstalk effects among atomic shells of the substrate material. Based on this model, the influence of key parameters—including substrate material, channel diameter, inter-channel wall thickness, and overall plate thickness—on the detection efficiency was analyzed. Considering current technological constraints, optimal values for these parameters and the corresponding detection efficiency were determined. The results indicate that the detection efficiency for hard X-rays in the 50–200 keV energy range can exceed 45%.
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Key words:
- microchannel plate /
- hard X-ray /
- detection efficiency
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图 1 微通道板的结构示意图:(a) 正面,d为微孔直径,w为相邻微孔间的最小距离;(b) 侧剖面,L为微通道板厚度,φ为微通道板斜切角
Figure 1. Schematic diagram of the MCP: (a) top view, d represents the diameter of micropores, w represents the minimum distance between adjacent micropores; (b) side section, L represents the thickness of the MCP, and φ represents bias angle
图 2 本研究模型与Farley所用模型计算结果的对比:(a) 在同一组优化参数下探测效率随着MCP厚度的变化;(b) 在Farley所使用的参数下2种模型的探测效率随入射X射线能量的变化
Figure 2. Comparison of calculation results between the model used in this work and the model employed by Farley: (a) detection efficiency as a function of the MCP thickness under the same set of optimization parameters; (b) detection efficiency of the two models as a function of incident energy of X-ray under the parameters used by Farley
表 1 铅、钡、硅和氧的光电效应截面(光子能量为100 keV)
Table 1. Photoelectron cross-section data for lead, barium, silicon, and oxygen (100 keV photon energy)
Lead (n=2.65) Barium (n=2.83) Silicon (n=3.00) Oxygen (n=3.15) Shell Ebind/
keVμshell/
(cm2·g−1)Shell Ebind/
keVμshell/
(cm2·g−1)Shell Ebind/
keVμshell/
(cm2·g−1)Shell Ebind/
keVμshell/
(cm2·g−1)K 88.00 4.130 K 37.15 1.68 K 1.84 0.022 5 h.s <1.00 0.003 1 L 14.32 0.846 L 5.63 0.23 h.s. <1.00 0.002 5 M 2.70 0.198 h.s <1.00 0.06 h.s. <1.00 0.062 -
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