Study on Diamond Film Deposition Growth on Stainless Steel Using Gas Source of CH3OH/H2
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摘要: 利用甲醇-氢（CH3OH-H2）混合气体为气源，30 nm厚的无定形硅为过渡层，借助于微波等离子体化学气相沉积（MWCVD）成功地将金刚石薄膜生长在不锈钢上，其最低生长温度可至420 ℃，并且甲醇-氢混合气体比传统的甲烷-氢（Ch4-H2）更具优势，测试表明这种金刚石薄膜有希望作为耐磨层在工业上应用。
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关键词:
- 甲醇-氢混合气 /
- 不锈钢 /
- 金刚石薄膜 /
- 微波等离子体化学气相沉积
Abstract: By means of microwave chemical vapor deposition (MWCVD) method, CH3OH/H2 gas mixtures are used as a gas source, along with a 30 nm amorphous thick silicon as a transition layer, a diamond film can successfully be grown on a stainless steel substrate, with a lowest growth temperature of 420 ℃. Tests show that the joint strength between the diamond film and the stainless steel substrate is high enough to be used as a wear-resisting layer in industry.-
Key words:
- CH3OH-H2 /
- stainless steel /
- diamond film /
- MWCVD
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Spitsyn B V, Bonilov L L, Derjaguin B V. J Cryst Growth, 1981, 52: 219. Shin H C, Sung C P, Lee C K, et al. Diamond and Related Materials, 1992, 1: 605-611. Ong T P, Chang R H. Appl Phys Lett, 1991, 58(4): 358. Harris S J, Weiner A M. Mat Res Soc Symp Proc, 1990, 162: 103. -
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