金属性氧化物LaCuO3的高氧压合成及Cu3+态的XPS研究

周建十

周建十. 金属性氧化物LaCuO3的高氧压合成及Cu3+态的XPS研究[J]. 高压物理学报, 1992, 6(1): 7-14 . doi: 10.11858/gywlxb.1992.01.002
引用本文: 周建十. 金属性氧化物LaCuO3的高氧压合成及Cu3+态的XPS研究[J]. 高压物理学报, 1992, 6(1): 7-14 . doi: 10.11858/gywlxb.1992.01.002
ZHOU Jian-Shi. The High Oxygen Pressure Synthesis of Metallic LaCuO3 and the XPS Study on Cu3+ State[J]. Chinese Journal of High Pressure Physics, 1992, 6(1): 7-14 . doi: 10.11858/gywlxb.1992.01.002
Citation: ZHOU Jian-Shi. The High Oxygen Pressure Synthesis of Metallic LaCuO3 and the XPS Study on Cu3+ State[J]. Chinese Journal of High Pressure Physics, 1992, 6(1): 7-14 . doi: 10.11858/gywlxb.1992.01.002

金属性氧化物LaCuO3的高氧压合成及Cu3+态的XPS研究

doi: 10.11858/gywlxb.1992.01.002
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    通讯作者:

    周建十

The High Oxygen Pressure Synthesis of Metallic LaCuO3 and the XPS Study on Cu3+ State

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    Corresponding author: ZHOU Jian-Shi
  • 摘要: 本文在成功地用超高氧压(~6.5 GPa)及高温(~980 ℃)合成和结构测定的基础上,首次对金属性化合物中LaCuO3中的Cu3+离子给予标定,并研究了它与绝缘体中Cu3+的区别。本论文中合成的LaCuO3为金属性化合物,电导率测量表明在大于13 K无超导电性迹象。XPS测量给出了LaCuO3中Cu2p3/2内层电子结合能相对于La2CuO4或CuO中的Cu2+向高结合能方向移动了约2.6 eV,这一量值远大于NaCuO2(绝缘体)中的Cu2p3/2相对于CuO中的Cu2+移动的值,约为1.3 eV。Auger谱测量表明,LaCuO3的修正了的Auger参数与CuO的基本相同,但L3VV的Auger电子动能相对CuO移动了2.8 eV。这些位移说明在金属性化合物LaCuO3中,Cu3+处在八面体位置上,它与近邻的Cu3+连成单个CuOCu桥,因此可作为对比p型高Tc含铜氧化物的XPS谱的标准。

     

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出版历程
  • 收稿日期:  1991-08-31
  • 修回日期:  1991-08-31
  • 刊出日期:  1992-03-05

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