八面体硼皮金刚石的形成于耐热性能的实验研究

The Experimental Research of Heat Resistance of Octahedral Boron-Skinned Diamond

Institute of High-Temperature and High-Pressure Physics, Chengdu University of Science and Technology, Chengdu 610065, China

摘要: 本文采用低能离子注入方法，在2 000、5 000、7 000和8 500 V四种不同的高压电场中进行了八面体硼（B）皮金刚石的离子注入实验，并与同一批未注入B的金刚石进行了XPS测试和热失重分析的对比实验。XPS测试结果证明了注B金刚石表面已形成B皮；热分析（TGA）实验表明了八面体B皮金刚石的耐热起始氧化温度T（onset）均超过1 000 ℃平均达1 027 ℃。结果表明：金刚石{111}晶面的B皮抗氧化性能最好，并与离子注入深度无关。
- 八面体B皮金刚石 /
- 离子注入 /
- 耐热性
Abstract: This paper presents the experiment results on the boron atom permeated into the surface of natural octahedral diamond to form boron skin with ion implantation method. Analysis was done to find whether its heat resistance is the best. The XPS analysis and TGA analysis were carried out on octahedral B-skinned diamond with four energies (2.0, 5.5, 7.0 and 8.5 keV). XPS analysis showed that B-skin was formed on the surface of diamond. TGA analysis proved that the onset oxidation temperature of octahedral B-skinned diamond is over 1 000 ℃. Results show that {111} plane of octahedral B-skinned diamond has the best anti-oxidization resistance, and this property is not dependent on the depth of B atoms implanted into the diamond.
- Octahedral B-skinned diamond /
- ion implantation /
- heat resistance