Citation: | HU Yong-Jin, HE Kai-Hua. Electronic Structure and Photoelectric Properties ofZnTe under High Pressure[J]. Chinese Journal of High Pressure Physics, 2014, 28(6): 641-647. doi: 10.11858/gywlxb.2014.06.001 |
[1] |
Mitchell D W, Das T P, Potzel W, et al. First-principles investigation of 67Zn isomer shifts in ZnF2 and the chalcogenides ZnO, ZnS, ZnSe, and ZnTe[J]. Phys Rev B, 1993, 48(22): 16449-16462. doi: 10.1103/PhysRevB.48.16449
|
[2] |
Bozzini B, Baker M A, Cavallotti P L, et al. Electrodeposition of ZnTe for photovoltaic cells[J]. Thin Solid Films, 2000, 361(2): 388-395.
|
[3] |
Ishizaki T, Ohtomo T, Fuwa A. Structural, optical and electrical properties of ZnTe thin films electrochemically deposited from a citric acid aqueous solution[J]. J Phys D: Appl Phys, 2004, 37(2): 255-258. doi: 10.1088/0022-3727/37/2/014
|
[4] |
邵军. Ti掺杂ZnTe体材料的优化光致发光光谱[J].物理学报, 2003, 52(7): 1743-1747.
Shao J. Optimal photoluminescence spectrum from Ti-doped ZnTe[J]. Acta Physica Sinica, 2003, 52(7): 1743-1747. (in Chinese)
|
[5] |
Sinyukov A M, Hayden L M. Generation and detection of terahertz radiation with multilayered electro-optic polymer films[J]. Opt Lett, 2002, 27(1): 55-57. doi: 10.1364/OL.27.000055
|
[6] |
Löffler T, Hahn T, Thomson M, et al. Large-area electro-optic ZnTe terahertz emitters[J]. Opt Express, 2005, 13(14): 5353-5362. doi: 10.1364/OPEX.13.005353
|
[7] |
王月.高压下ZnX(S、Se、Te)和TiO2的电学性质[D].长春: 吉林大学, 2010: 2-4.
Wang Y. The electrical properties of ZnX(S, Se, Te)and TiO2 under high pressure[D]. Changchun: Jilin University, 2010: 2-4. (in Chinese)
|
[8] |
Samara G A, Drickamer H G. Pressure induced phase transitions in some Ⅱ-Ⅵ compounds[J]. J Phys Chem Solids, 1962, 23(5): 457-461. doi: 10.1016/0022-3697(62)90086-0
|
[9] |
San-miguel A, Polian A, Gauthier M, et al. ZnTe at high pressure: X-ray-absorption spectroscopy and X-ray-diffraction studies[J]. Phys Rev B, 1993, 48(12): 8683-8693. doi: 10.1103/PhysRevB.48.8683
|
[10] |
Franco R, Mori-Sanchez P, Recio J M, et al. Theoretical compressibilities of high-pressure ZnTe polymorphs[J]. Phys Rev B, 2003, 68(19): 195208-195212. doi: 10.1103/PhysRevB.68.195208
|
[11] |
吕冉, 高涛, 李喜波, 等.闪锌矿ZnTe高温高压下的弹性及热力学性质[J].物理化学学报, 2010, 26(1): 13-17.
Lü R, Gao T, Li X B, et al. Elastic and thermodynamic properties of zinc-blende ZnTe under high temperature and pressure[J]. Acta Physico-Chimica Sinica, 2010, 26(1): 13-17. (in Chinese)
|
[12] |
Perdew J P, Levy M. Physical content of the exact Kohn-Sham orbital energies: Band gaps and derivative discontinuities[J]. Phys Rev Lett, 1983, 51(20): 1884-1887. doi: 10.1103/PhysRevLett.51.1884
|
[13] |
何开华, 郑广, 陈刚, 等.高压下氧化镉弹性性质、电子结构和光学性质的第一性原理研究[J].高压物理学报, 2007, 21(3): 299-304.
He K H, Zheng G, Chen G, et al. First principles study of the elastic, electronic and optical properties of CdO under pressure[J]. Chinese Journal of High Pressure Physics, 2007, 21(3): 299-304. (in Chinese)
|
[14] |
Kresse G, Hafner J. Ab initio molecular dynamics for liquid metals[J]. Phys Rev B, 1993, 47(1): 558-561. doi: 10.1103/PhysRevB.47.558
|
[15] |
Kresse G, Hafner J. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium[J]. Phys Rev B, 1994, 49(20): 14251-14269. doi: 10.1103/PhysRevB.49.14251
|
[16] |
Kresse G, Furthmuller J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set[J]. Comput Mater Sci, 1996, 6(1): 15-50. doi: 10.1016/0927-0256(96)00008-0
|
[17] |
Nassour A. First-principles calculations of structural properties and lattice dynamics in ZnSexTe1-x alloys[J]. Comput Mater Sci, 2013, 77(1): 403-407.
|
[18] |
Lempert R G, Hass K C, Ehrenreich H. Molecular coherent-potential approximation for zinc-blende pseudobinary alloys[J]. Phys Rev B, 1987, 36(2): 1111-1129. doi: 10.1103/PhysRevB.36.1111
|
[19] |
Khenata R, Bouhemadou A, Sahnoun M, et al. Elastic, electronic and optical properties of ZnS, ZnSe and ZnTe under pressure[J]. Comput Mater Sci, 2006, 38(1): 29-38. doi: 10.1016/j.commatsci.2006.01.013
|
[20] |
Sheetal S, Verma A S, Sarkar B K, et al. FP-LAPW+lo calculations for the structural, electronic, optical and mechanical properties of ZnX(X=S, Se and Te)[C]//Proceeding of the 56th DAE Solid Physics Symposium. Atlanta: American Institute of Physics, 2012: 849-850.
|
[21] |
Stampfl C, van de Walle C G. Density-functional calculations for Ⅲ-Ⅴ nitrides using the local-density approximation and the generalized gradient approximation[J]. Phys Rev B, 1999, 59(8): 5521-5535. doi: 10.1103/PhysRevB.59.5521
|
[22] |
Karazhanov S Z, Ravindran P, Kjekshus A, et al. Electronic structure and optical properties of ZnX(X=O, S, Se, Te): A density functional study[J]. Phys Rev B, 2007, 75(15): 155104-155117. doi: 10.1103/PhysRevB.75.155104
|
[23] |
黄昆, 韩汝琦.固体物理学[M].北京: 高等教育出版社, 1988: 438-440.
Huang K, Han R Q. Solid-State Physics[M]. Beijing: Higher Education Press, 1988: 438-440. (in Chinese)
|
[24] |
沈学础.半导体光谱和光学性质[M].北京: 科学出版社, 1992: 7-10.
Shen X C. Spectrum and Optical Property of Semiconductor[M]. Beijing: Science Press, 1992: 7-10. (in Chinese)
|
[25] |
冯晶, 肖冰, 陈敬超. CuInSe2电子结构与光学性质的第一性原理计算[J].物理学报, 2007, 56(10): 5990-5995.
Feng J, Xiao B, Chen J C. Electronic and optical properties of CuInSe2 from ab-initio calculations[J]. Acta Physica Sinica, 2007, 56(10): 5990-5995. (in Chinese)
|
[26] |
郭建云, 郑广, 何开华, 等. Al, Mg掺杂GaN电子结构及光学性质的第一性原理研究[J].物理学报, 2008, 57(6): 3740-3746.
Guo J Y, Zheng G, He K H, et al. First-principles study on electronic structure and optical properties of Al and Mg doped GaN[J]. Acta Physica Sinica, 2008, 57(6): 3740-3746. (in Chinese)
|
[27] |
Adachi S. Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information[M]. Boston: Kluwer Academic Publishers, 1999: 473-478.
|
[28] |
Cui X Y, Hu T J, Yang J, et al. The electrical properties of ZnTe under high pressure and moderate temperature[J]. Phys Status Solidi C, 2011, 8(5): 1676-1679. doi: 10.1002/pssc.201000609
|