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HE Lin, YIN Jun. Effects of the Vacancy Point-Defect on Electronic Structure and Optical Properties of Diamond under High Pressure[J]. Chinese Journal of High Pressure Physics, 2013, 27(6): 802-806. doi: 10.11858/gywlxb.2013.06.002
Citation: HE Lin, YIN Jun. Effects of the Vacancy Point-Defect on Electronic Structure and Optical Properties of Diamond under High Pressure[J]. Chinese Journal of High Pressure Physics, 2013, 27(6): 802-806. doi: 10.11858/gywlxb.2013.06.002

Effects of the Vacancy Point-Defect on Electronic Structure and Optical Properties of Diamond under High Pressure

doi: 10.11858/gywlxb.2013.06.002
  • Received Date: 17 Jan 2012
  • Rev Recd Date: 19 Mar 2012
  • Publish Date: 15 Dec 2013
  • By ultra-soft pseudo-potential approach of the plane wave based on the density-functional theory, the electronic structures and optical properties of diamond without and with vacancy point-defects were calculated at 255 GPa. The calculated results show that: at a shock pressure of 255 GPa, shock-induced vacancy point-defects in diamond crystal cause defective states within the band gap, and the optical absorption induced by the vacancy point-defects appears in the visible-light region of ~390-570 nm, and there is the transparency loss of diamond in that region. However, in the visible-light region of ~570-780 nm diamond remains transparent (its optical-absorption coefficient is still zero). Effects of shock-induced vacancy-defects on reflectivity and loss-function spectrums are similar: main-spectral peak move slightly toward short-wave region, and their intensity decreases to a small degree.

     

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