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Chinese Journal of High Pressure Physics  > 2013  >  27(3): 468-472.
ZHU Shan-Shan, YIN Chun-Hao, XU Zhen-Kun, WU Cai-Ping, HOU Lei-Tian. Research on Electronic Structure and Optical Properties of Oxygen Atom Adsorbed on GaAs Surface[J]. Chinese Journal of High Pressure Physics, 2013, 27(3): 468-472. doi: 10.11858/gywlxb.2013.03.023
Citation: ZHU Shan-Shan, YIN Chun-Hao, XU Zhen-Kun, WU Cai-Ping, HOU Lei-Tian. Research on Electronic Structure and Optical Properties of Oxygen Atom Adsorbed on GaAs Surface[J]. Chinese Journal of High Pressure Physics, 2013, 27(3): 468-472. doi: 10.11858/gywlxb.2013.03.023
shu

Research on Electronic Structure and Optical Properties of Oxygen Atom Adsorbed on GaAs Surface

doi: 10.11858/gywlxb.2013.03.023

  • College of Science, China University of Minging and Technology, Xuzhou 221116, China

  • Received Date: 22 Mar 2011
  • Rev Recd Date: 10 May 2011
  • Publish Date: 15 Jun 2013
    Abstract
  • Electronic structures and optical properties of oxygen atom adsorbed on GaAs surface have been calculated by using the first-principle based on density functional theory. The results show that the presence of O shifts the energy band to the deep part，with impurity level composed of As 4p and Ga 4p and Tamm surface caused by the splitting of As 4s and Ga 4s appearing in the forbidden band. Adsorption of O changes the distribution of d state and sp state electrons. The existence of O improves the defects in lattice-periodicity and changes the transition of electrons, resulting in the change in optical properties.

     

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