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Chinese Journal of High Pressure Physics  > 2012  >  26(6): 661-664.
ZHANG Dong-Mei, XIAO Hong-Yu, ZHANG Yong-Sheng, HAN Yong-Hao, GAO Chun-Xiao. Electrical Property of Fe3O4/-CD under High Pressure[J]. Chinese Journal of High Pressure Physics, 2012, 26(6): 661-664. doi: 10.11858/gywlxb.2012.06.010
Citation: ZHANG Dong-Mei, XIAO Hong-Yu, ZHANG Yong-Sheng, HAN Yong-Hao, GAO Chun-Xiao. Electrical Property of Fe3O4/-CD under High Pressure[J]. Chinese Journal of High Pressure Physics, 2012, 26(6): 661-664. doi: 10.11858/gywlxb.2012.06.010
shu

Electrical Property of Fe3O4/-CD under High Pressure

doi: 10.11858/gywlxb.2012.06.010
  • 1.

    Luoyang Institute of Science and Technology, Luoyang 471023, China;

  • 2.

    National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China

  • Received Date: 07 Jun 2011
  • Rev Recd Date: 09 Jul 2011
  • Publish Date: 15 Dec 2012
    Abstract
  • Electrical measurement under high pressure is an effective means to obtain physical property of materials. Using a microcircuit fabricated on a diamond anvil cell (DAC), we carried out the in-situ conductivity measurement on Fe3O4/-CD at pressures. The electrical conductivity of the sample increases with pressure increasing to 39.9 GPa, experimental results indicate that Fe3O4/-CD presents the transport behavior of a semiconductor. The abnormal conductivity changes at about 17.0 GPa is caused by the structural phase transition to high-pressure phase. The electrical conductivity indicates linear relation with pressure and can not return to original state, when the pressure comes back to ambient. As a result, we speculate high-pressure phase transition is not reversible.

     

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