Volume 26 Issue 6
Apr 2015
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WANG Xi-Cheng, GUO Jian-Yun, ZHENG Guang, HE Kai-Hua, CHEN Qi-Li, WANG Qing-Bo, CHEN Jing-Zhong. Density Functional Theory Studies of the Electronic and Optical Properties of Zinc Blende InN under High Pressure[J]. Chinese Journal of High Pressure Physics, 2012, 26(6): 653-660. doi: 10.11858/gywlxb.2012.06.009
Citation: WANG Xi-Cheng, GUO Jian-Yun, ZHENG Guang, HE Kai-Hua, CHEN Qi-Li, WANG Qing-Bo, CHEN Jing-Zhong. Density Functional Theory Studies of the Electronic and Optical Properties of Zinc Blende InN under High Pressure[J]. Chinese Journal of High Pressure Physics, 2012, 26(6): 653-660. doi: 10.11858/gywlxb.2012.06.009

Density Functional Theory Studies of the Electronic and Optical Properties of Zinc Blende InN under High Pressure

doi: 10.11858/gywlxb.2012.06.009
  • Received Date: 26 Jun 2011
  • Rev Recd Date: 03 Oct 2011
  • Publish Date: 15 Dec 2012
  • First-principles density functional studies of the properties of zinc blende InN are presented. We have employed density functional theory, as implemented in the CASTEP code, to investigate the electronic, elastic and optical properties of the material zinc blende InN under hydrostatic pressure range up to 70 GPa. The optimized geometrical lattice constant of InN in the ground state obtained by using generalized gradient approximation is in good agreement with existing results and the lattice constants with pressure increasing. The calculated partial densities of states (PDOS) of the material have two regions in the valence band of InN. It is shown that the PDOS is quite low in the vicinity of the Fermi level, implying that it tends to form stable structure but has a poor conductivity. The elastic tensor components have linear scaling with pressure, C11, C12 and B have a positive scaling with pressure. Whereas C44 and Cs have a negative scaling. The absorption spectra move towards the shorter wavelength direction. The shape of the spectra has almost no change when pressure increases. The results presented in this workare helpful for re-evaluating much of the pressure dependence of the properties for the material InN.

     

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  • Morkoc H. Nitride Semiconductors and Devices [M]. New York: Springer, 1999.
    Morkoc H, Mohammad S N. High-luminosity blue and blue-green gallium nitride light-emitting diodes [J]. Science, 1995, 267(5194): 51-55.
    Sobolev V V, Zlobina M A. Optical spectra and electronic structure of indium nitride [J]. Semiconductors, 1990, 33(4): 385-390.
    Carrier P, Wei S H. Theoretical study of the band-gap anomaly of InN [J]. J App Phys, 2005, 97(3): 033707-033711.
    Inushima T, Shiraishi T, Davydov V Y. Phonon structure of InN grown by atomic layer epitaxy [J]. Solid State Commun, 1999, 110(9): 491-495.
    Pugh S K, Dugdale D J, Brand S, et al. Electronic structure calculations on nitride semiconductors [J]. Semicondoc Sci Technol, 1999, 14(1): 23-28.
    Bouarissa N. Electronic structure and lattice properties of zinc-blende InN under high pressure [J]. Eur Phys J B, 2002, 26(2): 153-158.
    Tansley T L, Egan R J, Horrigan E C. Properties of sputtered nitride semiconductors [J]. Thin Solid Films, 1988, 164: 441-448.
    Walukiewicz W, Li S X, Wu J, et al. Optical properties and electronic structure of InN and In-rich group Ⅲ-nitride alloys [J]. J Cryst Growth, 2004, 269(1): 119-127.
    Wu J, Walukiewicz W, Yu K M, et al. Unusual properties of fundamental band gap of InN [J]. Appl Phys Lett, 2002, 80(21): 3967-3969.
    Ceperley D M, Alder B J. Ground state of the electron gas by a stochastic method [J]. Phys Rev Lett, 1980, 45(7): 566-569.
    Saib S, Bouarissa N. Ab initio lattice dynamics and piezoelectric properties of MgS and MgSe alkaline earth chalcogenides [J]. Eur Phys J B, 2010, 73(2), 185-193.
    Kanoun M B, Merad A E, Merad G, et al. Prediction study of elastic properties under pressure effect for zincblende BN, AlN, GaN and InN [J]. Solid-State Electronics, 2004, 48(9): 1601-1606.
    Gorczyca I, Dmowski L, Plesiewicz J, et al. Band structure and effective mass of InN under pressure [J]. Phys Status Solidi B, 2008, 245: 887-889.
    Li S X, Wu J, Haller E E, et al. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group Ⅲ nitride alloys [J]. Appl Phys Lett, 2003, 83(24): 4963-4966.
    Payne M C, Teter M P, Allan D C, et al. Iterative minimization techniques for ab initio total energy calculations C molecular dynamics and conjugate gradients [J]. Rev Mod Phys, 1992, 64(4): 1045-1097.
    Segall M D, Lindan Philip J D, Probert M J, et al. First-principles simulation: Ideas, illustrations and the CASTEP code [J]. J Phys: Condens Matter, 2002, 14(11): 2717-2744.
    Clark S J, Segall M D, Pickard C J, et al. First principles methods using CASTEP [J]. Zeitschrift fuer Kristallographie, 2005, 220: 567-571.
    Zheng G, Clark S J, Brand S, et al. First-principles studies of the structural and electronic properties of the polymer poly-phenylene vinylene [J]. J Phys: Condens Matter, 2004, 16(47): 8609-8620.
    Zheng G, Clark S J, Tulip P, et al. Ab-initio dynamical study of poly-para-phenylene vinylene [J]. J Chem Phys, 2005, 123(2): 024904-024911.
    Zheng G, Clark S J, Brand S, et al. Lattics dynamics of polymer polyaniline and poly(p-pyridyl-vinyline): First-principles determination [J]. Phys Rev B, 2006, 74(16): 165210-165217.
    He K H, Zheng G, Kirtman B, et al. First principles study on the electronic structure and effect of vanadium doping of BN nanowires [J]. Solid State Commun, 2010, 150(15-16): 701-705.
    Chen Q L, Tang C Q, Zheng G. First-principles study of TiO2 anatase(101) surfaces doped with N [J]. Physica B, 2009, 404(8-11): 1074-1077.
    Vanderbilt D. Soft self-consistent pseudopotentials in generalized eigenvalue formalism [J]. Phys Rev B, 1990, 41(11): 7892-7895.
    Perdew P J, Wang Y. Pair-distribution function and coupling-constant average for the spin-polarized electron gas [J]. Phys Rev B, 1992, 46(20): 12947-12954.
    Feynman R P. Forces in molecules [J]. Phys Rev, 1939, 56: 340-343.
    Monkhorst H J, Pack J D. Special points for Brillouin-zone integrations [J]. Phys Rev B, 1976, 13(12): 5188-5192.
    Kim K, Lambrecht W R L, Seagall B. Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN [J]. Phys Rev B, 1996, 53(24): 16310-16326.
    Zhang S, Chen N X. Lattice inversion for interionic pair potentials [J]. J Chem Phys, 2003, 118(9): 3974-3982.
    Sherwin M, Drummond T J. Gallium nitride (GaN) elastic moduli [J]. J Appl Phys, 1991, 69(9): 8423-8427.
    Yip S, Li J, Tang M, et al. Mechanistic aspects and atomic-level consequences of elastic instabilities in homogeneous crystals [J]. Mater Sci Eng A, 2001, 317: 236-240.
    Sin'ko G V, Smirnov N A. Ab initio calculations of elastic constants and thermodynamic properties of bcc, fcc, and hcp Al crystals under pressure [J]. J Phys: Condens Matter, 2002, 14(29): 6989-7005.
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