Volume 25 Issue 3
Oct 2013
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XU Guo-Ping, YIN Zhi-Min, CHEN Qi-Wu, HUANG Ji-Wu. Sintering Process of Polycrystalline Diamond Compact under High Pressure[J]. Chinese Journal of High Pressure Physics, 2011, 25(3): 200-206 . doi: 10.11858/gywlxb.2011.03.002
Citation: XU Guo-Ping, YIN Zhi-Min, CHEN Qi-Wu, HUANG Ji-Wu. Sintering Process of Polycrystalline Diamond Compact under High Pressure[J]. Chinese Journal of High Pressure Physics, 2011, 25(3): 200-206 . doi: 10.11858/gywlxb.2011.03.002

Sintering Process of Polycrystalline Diamond Compact under High Pressure

doi: 10.11858/gywlxb.2011.03.002
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  • Corresponding author: XU Guo-Ping
  • Received Date: 09 Mar 2010
  • Rev Recd Date: 19 Jul 2010
  • Publish Date: 15 Jun 2011
  • The polycrystalline diamond compact (PDC) samples sintered at 1 460 ℃, 5.6 GPa and at varied sintering time were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and EDX. In the XRD patterns, graphite (002) peak was found in the sample sintered for 40 s. It was also found that the WC (100) peaks in different samples change from weak to strong and then to weak, and finally disappear with the increase of the sinter time of PDC. Furthermore, the calculated results from the XRD data show that the magnitude of the cell parameter of the cobalt in the diamond layer of PDC increases with the sinter time due to the solution of the W or C. It was observed that the distribution of the cobalt diffusing from the substrate of WC is uneven.

     

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