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Chinese Journal of High Pressure Physics  > 2010  >  24(3): 237-240 .
YANG Da-Peng, JI Xiao-Rui, LI Ying-Ai, ZHANG Tie-Chen. The High-Pressure Synthesis of Cubic Boron Nitride Crystals with Various Shapes in Li-Based System[J]. Chinese Journal of High Pressure Physics, 2010, 24(3): 237-240 . doi: 10.11858/gywlxb.2010.03.013
Citation: YANG Da-Peng, JI Xiao-Rui, LI Ying-Ai, ZHANG Tie-Chen. The High-Pressure Synthesis of Cubic Boron Nitride Crystals with Various Shapes in Li-Based System[J]. Chinese Journal of High Pressure Physics, 2010, 24(3): 237-240 . doi: 10.11858/gywlxb.2010.03.013
shu

The High-Pressure Synthesis of Cubic Boron Nitride Crystals with Various Shapes in Li-Based System

doi: 10.11858/gywlxb.2010.03.013
  • 1.

    Key Laboratory of Geo-Exploration Instrumentation Ministry of Education, College of Instrumentation & Electrical Engineering, Jilin University, Changchun 130026, China;

  • 2.

    The Department of Preparatory Course, Shenyang Institute of Engineering, Shenyang 110136, China;

  • 3.

    National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China

More Information
  • Corresponding author: YANG Da-Peng
  • Received Date: 27 May 2009
  • Rev Recd Date: 21 Sep 2009
  • Publish Date: 15 Jun 2010
    Abstract
  • By high pressure and high temperature (HPHT) method, we used hexagonal boron nitride (hBN) as raw materials, Li3N, Li3N+LiH, LiH, LiH+LiNH2, Li3N+LiNH2 as catalyst, and successfully prepared thick plate, spherical, octahedron or hex-octahedron, flat cone and flaky hexagon morphology cubic boron nitride (cBN) crystals with relevant growth conditions. It was summarized that various Li-based catalysts/additives had distinct effects on the cBN crystal morphologies synthesized.

     

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    • References(14)
  • Wentorf R H. Sythesis of the Cubic Form of Boron Nitride [J]. J Chem Phys, 1961, 34: 809-812.
    McKenzie D R, Sainty W G, Green D. The Microstructure of Boron Nitride Thin Films [J]. Mater Sci Forum, 1990, (54-55): 193-206.
    Davis R F. Ⅲ-Ⅴ Nitrides for Electronic and Optoelectronic Applications [J]. Proc IEEE, 1991, 79: 702-712
    Sichuan Cubic Boron Nitride Co-op. Group. The Synthesis of Cubic Boron Nitride under High Pressures and Temperatures [J]. Acta Phys Sin, 1976, 25(1): 1-9. (in Chinese)
    四川省立方氮化硼协作组. 高温高压下立方氮化硼的合成 [J]. 物理学报, 1976, 25(1): 1-9.
    Demazeau G. Growth of Cubic Boron Nitride by Chemical Vapor Deposition and High-Pressure High-Temperature Synthesis [J]. Diamond Relat Mater, 1993, 2: 197-200.
    Sumiya H, Iseki T, Onodera A. High Pressure Synthesis of Cubic Boron Nitride from Amorphous State [J]. Mater Res Bull, 1983, 18: 1203-1207.
    Stockel S, Weise K, Dietrich D, et al. Influence of Composition and Structure on the Mechanical Properties of BCN Coatings Deposited by Thermal CVD [J]. Thin Solid Films, 2002, 420-421: 465-471.
    Deng J X, Wang X Y, Yao Q, et al. Optical Band Gap of Cubic Boron Nitride Thin Films Deposited by Sputtering [J]. Acta Phys Sin, 2008, 57: 6631-6635. (in Chinese)
    邓金祥, 汪旭洋, 姚倩, 等. 立方氮化硼薄膜的光学带隙 [J]. 物理学报, 2008, 57: 6631-6635.
    Wentorf R H. Preparation of Semiconducting Cubic Boron Nitride [J]. J Chem Phys, 1962, 36: 1990-1991.
    Vel L, Demazeau G, Etourneau J. Cubic Boron Nitride: Synthesis, Physicochemical Properties and Applications [J]. Mater Sci Eng B, 1991, 10: 149-164.
    Mishima O, Tanaka J, Yamaoka S, et al. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure [J]. Science, 1987, 238: 181-183.
    Edgar J H. Properties of Group Ⅲ Nitride [M]. London: INSPEC, 1994: 7.
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