knowledge of professional and technical personnel Notice on the organization of advanced research class on high-pressure science and new materials of engineering
Volume 23 Issue 5
Apr 2015
Turn off MathJax
Article Contents
Chinese Journal of High Pressure Physics  > 2009  >  23(5): 327-331 .
SHEN Xi, SHEN Jun, YOU Shu-Jie, YANG Liu-Xiang, TANG Ling-Yun, LI Yan-Chun, LIU Jing, YANG Hua, ZHOU Wei-Ya, JIN Chang-Qing, et al.. Phase Transition of Zn2SnO4 Nanowires under High Pressure[J]. Chinese Journal of High Pressure Physics, 2009, 23(5): 327-331 . doi: 10.11858/gywlxb.2009.05.002
Citation: SHEN Xi, SHEN Jun, YOU Shu-Jie, YANG Liu-Xiang, TANG Ling-Yun, LI Yan-Chun, LIU Jing, YANG Hua, ZHOU Wei-Ya, JIN Chang-Qing, et al.. Phase Transition of Zn2SnO4 Nanowires under High Pressure[J]. Chinese Journal of High Pressure Physics, 2009, 23(5): 327-331 . doi: 10.11858/gywlxb.2009.05.002
shu

Phase Transition of Zn2SnO4 Nanowires under High Pressure

doi: 10.11858/gywlxb.2009.05.002
  • 1.

    State Key Laboratory of Gansu Advanced Non-Ferrous Metal Materials, Lanzhou University of Technology, Lanzhou 730050, China;

  • 2.

    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

  • 3.

    Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China

More Information
  • Corresponding author: SHEN Xi
  • Received Date: 25 Mar 2009
  • Rev Recd Date: 25 Mar 2009
  • Publish Date: 15 Oct 2009
    Abstract
  • In situ high-pressure angle dispersive X-ray diffraction (ADXRD) experiments on inverse spinel Zn2SnO4 (ZTO) nanowires were carried out in a diamond anvil cell (DAC) at room temperature. The crystal symmetry becomes lower at around 12.9 GPa and an intermediate phase occurs. At about 32.7 GPa, a phase transition happens and a high-pressure phase appears. After high pressure treatment, the nanowires are broken into nanorods. Through fitting the Birch-Murnaghan equation, we obtained the bulk modulus B0=(168.69.7) GPa for the inverse spinel ZTO nanowires, assuming its first order derivative B0=4 at ambient pressure.

     

    • FullText(HTML)
  • loading
    • References(16)
  • Wang L S, Zhang X Z, Liao X, et al. A Simple Method to Synthesize Single-Crystalline Zn2SnO4 (ZTO) Nanowires and Their Photoluminescence Properties [J]. Nanotech, 2005, 16(12): 2928-2931.
    Segev D, Wei S. Structure-Derived Electronic and Optical Properties of Transparent Conducting Oxides [J]. Phys Rev B, 2005, 71(12): 125129.
    Nomura K, Ohta H, Ueda K, et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor [J]. Science, 2003, 300(5623): 1269-1272.
    Granqvist C G, Hultaker A. Transparent and Conducting ITO Films: New Developments and Applications [J]. Thin Solid Films, 2002, 411(1): 1-5.
    Gao S, Zhao Y, Gou P P, et al. Preparation of CuAlO2 Nanocrystalline Transparent Thin Films with High Conductivity [J]. Nanotech, 2003, 14(5): 538-541.
    Huang M H, Mao S, Feick H, et al. Room-Temperature Ultraviolet Nanowire Nanolasers [J]. Science, 2001, 292(5523): 1897-1899.
    Pan Z W, Dai Z R, Wang Z L. Nanobelts of Semiconducting Oxides [J]. Science, 2001, 291(5510): 1947-1949.
    Wang S M, Yang Z S, Lu M K, et al. Coprecipitation Synthesis of Hollow Zn2SnO4 Spheres [J]. Materials Letters, 2007, 61(14-15): 3005-3008.
    Young D L, Williamson D L, Coutts T J. Structural Characterization of Zinc Stannate Thin Films [J]. J Appl Phys, 2002, 91(3): 1464-1471.
    Wei S, Zhang S B. First-Principles Study of Cation Distribution in Eighteen Closed-Shell AⅡB2ⅢO4 and AⅣB2ⅡO4 Spinel Oxides [J]. Phys Rev B, 2001, 63(4): 045112.
    Wang J X, Xie S S, Yuan H J, et al. Synthesis, Structure, and Photoluminescence of Zn2SnO4 Single Crystal Nanobelts and Nanorings [J]. Solid State Commun, 2004, 131(7): 435-440.
    He R R, Law M, Fan R, et al. Functional Bimorph Composite Nanotapes [J]. Nano Lett, 2002, 2(10): 1109-1112.
    Yu R C, Zhao P, Li F Y, et al. Effect of Ba Content on Initial Magnetization of Sr2-xBaxFeMoO6 and the Structural Stability under High Pressure [J]. Phys Rev B, 2004, 69(21): 214405.
    Liu J, Zhao J, Che R Z, et al. Progress in High Pressure EDXD System and Research at Beijing Synchrotron Radiation Facility [J]. Chinese Science Bulletin, 2000, 45(18): 1659-1662.
    Mo S D, Ching W Y. Electronic Structure of Normal, Inverse, and Partially Inverse Spinels in the MgAl2O4 System [J]. Phys Rev B, 1996, 54(23): 16555-16561.
    Barth T F W, Posnjak E. Spinel Structures with and without Variate Atom Equipoints [J]. Z Kristallogr Kristallgeom Kristallphys Kristallchem, 1932, 82(5-6): 325-341.
    • Relative Articles
    • Supplements(0)
    • Cited By
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索
    Get Citation
    PDF
    XML

    Article Metrics

    Article views(7938) PDF downloads(704) Cited by()
    Proportional views
    Related

    Copyright©《高压物理学报》编辑部

    Tel:0816-2490042 E-mail:gaoya@caep.cn

    Shu ICP, 11011126 -2

    Supported by: Beijing Renhe Information Technology Co. Ltd support: info@rhhz.net  

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return