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Chinese Journal of High Pressure Physics  > 2009  >  23(4): 241-246 .
JIN En-Ji, YAO Li-De, WANG Fei-Fei, SHEN Xi, YOU Shu-Jie, YANG Liu-Xiang, JIANG Sheng, LI Yan-Chun, et al.  , . Structural Transition and Raman Scattering of ZnSe Nanoribbons under High Pressure[J]. Chinese Journal of High Pressure Physics, 2009, 23(4): 241-246 . doi: 10.11858/gywlxb.2009.04.001
Citation: JIN En-Ji, YAO Li-De, WANG Fei-Fei, SHEN Xi, YOU Shu-Jie, YANG Liu-Xiang, JIANG Sheng, LI Yan-Chun, et al.  , . Structural Transition and Raman Scattering of ZnSe Nanoribbons under High Pressure[J]. Chinese Journal of High Pressure Physics, 2009, 23(4): 241-246 . doi: 10.11858/gywlxb.2009.04.001
shu

Structural Transition and Raman Scattering of ZnSe Nanoribbons under High Pressure

doi: 10.11858/gywlxb.2009.04.001
  • 1.

    Department of Mathematics and Physics, Beijing Institute of Petrochemical Technology, Beijing 102617, China;

  • 2.

    Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

  • 3.

    Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China

More Information
  • Corresponding author: JIN En-Ji
  • Received Date: 24 Nov 2008
  • Rev Recd Date: 27 Feb 2009
  • Publish Date: 15 Aug 2009
    Abstract
  • Structural stability of ZnSe nanoribbons was analyzed by means of high pressure in situ angular dispersive X-ray diffraction(ADXD). The pressure induced structural transition from the Zinc blende (ZB) to a rocksalt (RS) phase occurs at about 12.6 GPa, and at the transition point the relative volume reduction is close to 13%. By fitting the relative volume-pressure relation to the Birch-Murnaghan equation of states, the bulk modulus B0 for the ZB and RS phases were determined. The values of B0 are 56 GPa (B0=4) and 116 GPa (B0=4) for the former and the latter, respectively. According to the measured high-pressure Raman scattering spectra, the TO phonon modes split into two peaks at about 5.5 GPa, and the LO peak gradually disappears above 12.8 GPa due to the semiconductor-metal transition. Using the value of the bulk modulus obtained from the ADXD experiments, the corresponding mode Grneisen parameters are obtained for the ZB phase.

     

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