The Behavior of Diaspore under High Pressure and High Temperature

The high heat conductivity and the high temperature carbonization of diamond make it difficult to achieve high temperature on diamond anvil cell, and the temperature in sample chamber is difficult to control accurately. Here we used sputtered alumina film as heat resistant layer, and an experiment at high pressure and high temperature was performed for diaspore on diamond anvil cell. Most previous experiments about diaspore for structure studying were performed at ambient temperature, and few reports of high temperature experiments were found. The changes of lattice parameters and compressibility of a-, b- and c- axis were investigated. The disputed bulk modulus was obtained by combining the experimental and computational results, and the bulk modulus of sample at high temperature and ambient temperature was compared.