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Chinese Journal of High Pressure Physics  > 2008  >  22(3): 309-312 .
LIU Li-Hua, LI Ying-Ai, GU Guang-Rui, ZHAO Yong-Nian. Field Emission Characteristics of Boron Nitride Film Deposited on Dimond Film Substrate[J]. Chinese Journal of High Pressure Physics, 2008, 22(3): 309-312 . doi: 10.11858/gywlxb.2008.03.015
Citation: LIU Li-Hua, LI Ying-Ai, GU Guang-Rui, ZHAO Yong-Nian. Field Emission Characteristics of Boron Nitride Film Deposited on Dimond Film Substrate[J]. Chinese Journal of High Pressure Physics, 2008, 22(3): 309-312 . doi: 10.11858/gywlxb.2008.03.015
shu

Field Emission Characteristics of Boron Nitride Film Deposited on Dimond Film Substrate

doi: 10.11858/gywlxb.2008.03.015
  • 1.

    National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;

  • 2.

    College of Physics, Jilin Normal University, Siping 136000, China;

  • 3.

    College of Science and Engineering, Yanbian University, Yanji 133002, China

More Information
  • Corresponding author: LI Ying-Ai
  • Received Date: 21 Sep 2007
  • Rev Recd Date: 25 Nov 2007
  • Publish Date: 05 Sep 2008
    Abstract
  • Boron nitride (BN) thin film on diamond film substrate was synthesized by radio frequency (rf) magnetic sputtering physical vapor deposition. The field emission characteristics of diamond film and BN coated diamond film were measured in an ultrahigh vacuum system. Experiments demonstrate that BN film is effective in improving the field emission characteristics of diamond film. The threshold electric field is 12 V/m and highest emission current density is 272 A/cm2 for the BN coated diamond film. The Fowler-Nordheim plots show that electron emission is due to tunneling over a barrier.

     

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    • References(6)
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