Volume 21 Issue 1
Apr 2015
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SU Tai-Chao, ZHU Pin-Wen, MA Hong-An, REN Guo-Zhong, GUO Jian-Gang, IMAI Yoshio, JIA Xiao-Peng. Thermoelectric Properties of N-PbTe Doped with Sb2Te3 Prepared by High-Pressure and High-Temperature[J]. Chinese Journal of High Pressure Physics, 2007, 21(1): 55-58 . doi: 10.11858/gywlxb.2007.01.009
Citation: SU Tai-Chao, ZHU Pin-Wen, MA Hong-An, REN Guo-Zhong, GUO Jian-Gang, IMAI Yoshio, JIA Xiao-Peng. Thermoelectric Properties of N-PbTe Doped with Sb2Te3 Prepared by High-Pressure and High-Temperature[J]. Chinese Journal of High Pressure Physics, 2007, 21(1): 55-58 . doi: 10.11858/gywlxb.2007.01.009

Thermoelectric Properties of N-PbTe Doped with Sb2Te3 Prepared by High-Pressure and High-Temperature

doi: 10.11858/gywlxb.2007.01.009
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  • Corresponding author: JIA Xiao-Peng
  • Received Date: 02 Mar 2006
  • Rev Recd Date: 16 Jun 2006
  • Publish Date: 05 Mar 2007
  • N-type PbTe compounds doped with Sb2Te3 have been prepared at high-pressure and high-temperature (HPHT). The thermoelectric properties of all the samples have been measured at room temperature. The Seebeck coefficients in absolute value and the electrical resistivities decrease with an increase of Sb2Te3 content dramatically first and then slowly. The thermal conductivity slight increases with an increase of the content of doping. The figure of merit, Z, increases first and then decreases and the maximum value reaches 8.710-4 K-1 which is much higher than that PbTe doped with PbI2 prepared at normal pressure. This result indicates that enhanced thermoelectric properties of PbTe can be obtained by the HPHT method with suitable dopant.

     

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