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Chinese Journal of High Pressure Physics  > 2006  >  20(2): 153-156 .
RAN Xian-Wen, TANG Wen-Hui, TAN Hua, DAI Cheng-Da. Calculation of Shock Temperature by Considering Electronic Contribution[J]. Chinese Journal of High Pressure Physics, 2006, 20(2): 153-156 . doi: 10.11858/gywlxb.2006.02.007
Citation: RAN Xian-Wen, TANG Wen-Hui, TAN Hua, DAI Cheng-Da. Calculation of Shock Temperature by Considering Electronic Contribution[J]. Chinese Journal of High Pressure Physics, 2006, 20(2): 153-156 . doi: 10.11858/gywlxb.2006.02.007
shu

Calculation of Shock Temperature by Considering Electronic Contribution

doi: 10.11858/gywlxb.2006.02.007
  • 1.

    Physical Institute of Technology, College of Science, National University of Defense Technology, Changsha 410073, China;

  • 2.

    Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, CAEP, Mianyang 621900, China

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  • Corresponding author: RAN Xian-Wen
  • Received Date: 18 Apr 2005
  • Rev Recd Date: 23 May 2005
  • Publish Date: 05 Jun 2006
    Abstract
  • Basing on the former shock temperature calculation methods, a new method was proposed, which considered the electronic contribution and successfully avoided the difficulties of calculating 0 K EOS of materials. By applying it to aluminum and copper, the results were well consistent with experimental data. And the calculated onset of melting on the Hugoniot curves of aluminum and copper were (125.5 GPa, 4 705 K) and (231 GPa, 5 369 K), respectively, in good agreement with the presented experimental data of aluminum and copper.

     

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