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Chinese Journal of High Pressure Physics  > 2004  >  18(3): 193-197 .
ZHANG Jiang-Shan, E Bei, YU Ri-Cheng, LI Feng-Ying, LI Xiao-Dong, LI Yan-Chun, MA Mai-Ning, LIU Jing, LIU Zhen-Xing, BAO Zhong-Xing, et al.. The Structural Stability and Electrical Properties of Nanometer-Scale Sr2FeMoO6 Polycrystals under High Pressure[J]. Chinese Journal of High Pressure Physics, 2004, 18(3): 193-197 . doi: 10.11858/gywlxb.2004.03.001
Citation: ZHANG Jiang-Shan, E Bei, YU Ri-Cheng, LI Feng-Ying, LI Xiao-Dong, LI Yan-Chun, MA Mai-Ning, LIU Jing, LIU Zhen-Xing, BAO Zhong-Xing, et al.. The Structural Stability and Electrical Properties of Nanometer-Scale Sr2FeMoO6 Polycrystals under High Pressure[J]. Chinese Journal of High Pressure Physics, 2004, 18(3): 193-197 . doi: 10.11858/gywlxb.2004.03.001
shu

The Structural Stability and Electrical Properties of Nanometer-Scale Sr2FeMoO6 Polycrystals under High Pressure

doi: 10.11858/gywlxb.2004.03.001
  • 1.

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

  • 2.

    School of Mechano-Electronics Engineering, Beijing Institute of Technology, Beijing 100081, China;

  • 3.

    Department of Material, Changchun University of Techonology, Changchun 130012, China;

  • 4.

    Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China

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  • Corresponding author: ZHANG Jiang-Shan
  • Received Date: 22 Dec 2003
  • Rev Recd Date: 01 Mar 2004
  • Publish Date: 05 Sep 2004
    Abstract
  • Double perovskite structural compounds Sr2FeMoO6 powders with grain sizes of 50 nm (sample A) and 100 nm (sample B) have been synthesized using polymer-network gel method. Their structural stabilities and electrical properties under high pressure have been investigated. As compared with the result of bulk sample C with m grain size obtained before, the sample A shows the largest bulk modulus B0 among the three and largest pressure region for the drop in the curve of resistance versus pressure. The results can be explained in terms of the effect of large amount grain boundaries in nanometer-scale materials. On the basis of the results of resistance and capacitance versus pressure, it is considered that both samples undergo an electronic structural transition under high pressure.

     

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