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Chinese Journal of High Pressure Physics  > 2004  >  18(1): 90-93 .
TENG Lin, YANG Bang-Chao, DU Xiao-Song, ZHOU Hong-Ren, CUI Hong-Ling, XIAO Qing-Guo. Research on Piezoresistance Sensitivity of Yb Film Sensor[J]. Chinese Journal of High Pressure Physics, 2004, 18(1): 90-93 . doi: 10.11858/gywlxb.2004.01.016
Citation: TENG Lin, YANG Bang-Chao, DU Xiao-Song, ZHOU Hong-Ren, CUI Hong-Ling, XIAO Qing-Guo. Research on Piezoresistance Sensitivity of Yb Film Sensor[J]. Chinese Journal of High Pressure Physics, 2004, 18(1): 90-93 . doi: 10.11858/gywlxb.2004.01.016
shu

Research on Piezoresistance Sensitivity of Yb Film Sensor

doi: 10.11858/gywlxb.2004.01.016

  • College of Microelectronics and Solid-State Electronics, UESTC, Chengdu 610054, China

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  • Corresponding author: TENG Lin
  • Received Date: 01 Jul 2003
  • Rev Recd Date: 17 Oct 2003
  • Publish Date: 05 Mar 2004
    Abstract
  • Yb film sensor was fabricated by vacuum evaporation technique, and its performance has been studied under the longitudinal quasi-static loading in the range of 1 GPa. The comparison of two group Yb film sensors, one is unheated treatment and the other is heat treatment at 300 ℃ for 1 h in vacuum, indicates that the piezoresistance coefficient of the heated film is larger than not only the unheated, but also the Yb foils. With the analyses of SEM and electric performance, it is discovered that heat treatment helps to grow crystal, decrease the film resistivity and improve the piezoresistance coefficient. XRD analysis reveals that pressure may promote the growth of Yb crystals. Also, after treatment by pressure (1 GPa) Yb film sensors are easy to fabricate and have stable performance, which may have extensive usage in industry.

     

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