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Chinese Journal of High Pressure Physics  > 2002  >  16(4): 297-300 .
REN Zhi-Ang, ZHANG Can-Yun, ZHONG Xiang-Li, WANG Jin-Bin, YANG Guo-Wei. Pulsed Laser Deposition of Explosion Boron Nitride at Ambient Temperature[J]. Chinese Journal of High Pressure Physics, 2002, 16(4): 297-300 . doi: 10.11858/gywlxb.2002.04.010
Citation: REN Zhi-Ang, ZHANG Can-Yun, ZHONG Xiang-Li, WANG Jin-Bin, YANG Guo-Wei. Pulsed Laser Deposition of Explosion Boron Nitride at Ambient Temperature[J]. Chinese Journal of High Pressure Physics, 2002, 16(4): 297-300 . doi: 10.11858/gywlxb.2002.04.010
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Pulsed Laser Deposition of Explosion Boron Nitride at Ambient Temperature

doi: 10.11858/gywlxb.2002.04.010

  • Department of Physics, Xiangtan University, Xiangtan 411105, China

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  • Corresponding author: REN Zhi-Ang
  • Received Date: 01 Dec 2001
  • Rev Recd Date: 04 Mar 2002
  • Publish Date: 05 Dec 2002
    Abstract
  • In this study, explosion boron nitride (E-BN) was found in the process of depositing cubic boron nitride (cBN) thin film by Plasma Enhanced Pulsed Laser Deposition (PEPLD) method at room temperature. The E-BN thin film was identified using SEM, FTIR and X-ray diffraction techniques. The thermodynamic parameters and time parameter for preparing high-quality E-BN thin film were obtained. This has supported the existing formation theory of the structure of E-BN.

     

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    • References(6)
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    ZHU Pin-wen, ZHAO Yong-nian. ZOU Guang-tian, et al. Synthesis of High-Pressure Phase of BN: E-BN, w-BN, c- BN by Physical Vapor Deposition Method [J]. Chinese Journal of High Pressure Physics, 2000, 14(2) : 111-113. (in Chinese)
    朱品文, 赵永年, 邹广田, 等. 用气相沉积方法在低气压下制备BN的高压相E-BN、c-BN、w-BN [J]. 高压物理学报, 2000, 14(2): 111-113.
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