Citation: | HONG Rui-Jin, MA Xian-Feng, YAN Xue-Wei, ZHAO Wei, TANG Hua-Guo. Preparation of GaN Ceramic under High Temperature and High Pressure[J]. Chinese Journal of High Pressure Physics, 2002, 16(4): 259-264 . doi: 10.11858/gywlxb.2002.04.004 |
Fasol G. Room-Temperature Blue Gallium Nitride Laser Diode [J]. Science, 1996, 272: 1751.
|
Ponce F A, Bour D P. Nitride-Based Semiconductors for Blue and Green Light-Emitting Devices [J]. Nature, 1997, 386: 351.
|
Nakamura S, Mukai T, Senoh M. Candela-Class High-Brightness ingan/Algan Double-Heterostructure Blue-Ligh Emitting Diodes [J]. Appl Phys Lett, 1994, 64: 1687.
|
Xie Y, Qian Y, Wang W, et al. A Benzene-Thermal Synthetic Route to Nanocrystalline GaN [J]. Science, 1996, 272: 1926.
|
Han W, Fan S, Li Q, et al. Synthesis of Gallium Nitride Nanorodes through a Carbon Nanotube-Confined Reaction [J]. Science, 1997, 277: 1287.
|
Nakamura S, Harada Y, Seno M. Novel Metalorganic Chemical Vapor Deposition System for GaN Growth [J]. Appl Phys Lett, 1991, 58: 2021.
|
Strite S, Lin M E, Morkoc H. Progress and Prospects for GaN and the Ⅲ-Ⅴ Nitride Semiconductors [J]. Thin Solid Films, 1993, 231: 197.
|
Yamane H, Kajiwara T, Sckiguchi T, et al. Zinc-Blende-Type Cubic GaN Single Crystals Prepared in a Potassium Flux [J]. Jpn J Appl Phys, 2000, 39: L146.
|
Karpinski J, Jun J, Porowski S. Equilibrium Pressure of N2 over GaN and High Pressure Solution Growth of GaN [J]. J Cryst Growth, 1986, 66: 1.
|
Perlin P, Gorczyca I, Christersen N E, et al. Pressure Studies of Gallium Nitride: Crystal Growth and Fundametal Electronic Properties [J]. Phys Rev B, 1992, 45: 13307.
|
Cui Shuojing, Zhao Tinhe, Yan Xuewei, et al. Polycrystalline Jadeite Gem [J]. Chinese Journal of High Pressure Physics, 1994, 8(2): 99. (in Chinese)崔硕景, 赵廷河, 闫学伟, 等. 人造聚晶翡翠宝石 [J]. 高压物理学报, 1994, 8(2): 99.
|
Xia H, Xia Q, Ruoff A L. High-Pressure Structure of Gallium Nitride: Wutzite-to-Rocksalt Phase Transition [J]. Phys Rev B, 1993, 47: 12925.
|
Anthong R. West Solid State Chemistry and Its Applications [M]. New York: John WileySons, 1984. 445.
|
Liu Xiao-yang, Zhao Xu-dong, Hou Wei-min, et al. Transformation of Boron Oxide B2O3 under High Pressure and High Temperature [J]. Chinese Journal of High Pressure Physics, 1995, 9(3): 213. (in Chinese)
|
刘晓炀, 赵旭东, 侯为民, 等. 高温高压条件下三氧化二硼相变过程的研究 [J]. 高压物理学报, 1995, 9(3): 213.
|
Li Shao-chun, Zhu Jia-lin, Yu Ri-cheng, et al. High Pressure Synthesis of Bulk MgB2 Superconductor [J]. Chinese Journal of High Pressure Physics, 2001, 15(3): 226. (in Chinese)
|
李绍春, 朱嘉林, 禹日成, 等. MgB2超导体块材的高压合成 [J]. 高压物理学报, 2001, 15(3): 226.
|
ZHOU Zhen-jun, LI Gong, YANG Zheng-fang, et al. The Effect of cBN Inclusions on the Densification and Microstructure of Fine-Grained Polycrystalline Diamond Compact [J]. Chinese Journal of High Pressure Physics, 2001, 15(3): 229. (in Chinese)
|
周振君, 李工, 杨正方, 等. 掺杂立方氮化硼对金刚石聚晶致密化和显微结构的影响 [J]. 高压物理学报, 2001, 15(3): 229.
|
Yamane H, Shimada M, Endo T. Polarity of GaN Single Crystals Prepared with Na Flux [J]. Jpn J Appl Phys, 1998, 37: 3436.
|