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Chinese Journal of High Pressure Physics  > 2000  >  14(4): 298-301 .
GU Hui-Cheng, CHEN Liang-Chen, CHU Jun-Hao, BAO Zhong-Xing, LIU Ke-Yue, WANG Jin-Yi, ZHENG Kang-Li. Structures and the Equation of State of Hg1-xCdxTe under High Pressure[J]. Chinese Journal of High Pressure Physics, 2000, 14(4): 298-301 . doi: 10.11858/gywlxb.2000.04.011
Citation: GU Hui-Cheng, CHEN Liang-Chen, CHU Jun-Hao, BAO Zhong-Xing, LIU Ke-Yue, WANG Jin-Yi, ZHENG Kang-Li. Structures and the Equation of State of Hg1-xCdxTe under High Pressure[J]. Chinese Journal of High Pressure Physics, 2000, 14(4): 298-301 . doi: 10.11858/gywlxb.2000.04.011
shu

Structures and the Equation of State of Hg1-xCdxTe under High Pressure

doi: 10.11858/gywlxb.2000.04.011
  • 1.

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

  • 2.

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  • 3.

    International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China;

  • 4.

    North China Research Institute of Electro-Optics, Beijing 100015, China

More Information
  • Corresponding author: GU Hui-Cheng
  • Received Date: 09 Dec 1999
  • Rev Recd Date: 06 May 2000
  • Publish Date: 05 Dec 2000
    Abstract
  • Phase transitions of Hg1-xCdxTe (x=0.19) were observed by X-ray powder diffract ion technique with a diamond anvil cell (DAC) at pressures up to 10.1 GPa. At ambient pressure Hg1-xCdxTe (x=0.19) has zinc-blended structure. Two phase transitions in Hg1-xCdxTe (x=0.19) we observed experimentally. The first appears at ～3 GPa, and the second between 6.8 and 8.3 GPa. The second phase transition is believed to be related with metallization of Hg1-xCdxTe (x=0.19). Based on our experimental results, its equation of state in the pressure range of 0~3 GPa was also obtained.

     

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    • References(3)
  • 鲍忠兴, 褚君浩, 柳翠霞, 等. Hg1-xCdxTe在髙压下的电学性质、状态方程与相变 [J]. 高压物理学报, 2000, 14(1): 28.
    Nelmes R J, Memahon M I, Wright N G, et al. Structural Studies ofⅡ-Ⅵ Semiconductors at High Pressure [J]. J Phys Chem Solids, 1995, 56(3/4): 545-549.
    Werner A, Hochheimer H D, Stnissner K, et al. High Pressure X-Ray Diffraction Studies on HgTe and HgS to 20 GPa [J]. Phys Rev B, 1983, 28(6): 3330-3334.
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