Electrical Properties, Equations of State and Phase Transitions in Hg1-xCdxTe at High Pressure

The resistance-pressure and capacitance-pressure relationships for Hg1-xCdxTe (x=0.19, 0.22) at room temperature at pressures up to 20 GPa have been studied in a diamond anvil cell using resistance and capacitance measurements established by us. The experimental results show that Hg1-xCdxTe (x=0.19, 0.22) undergo two electronic structure transitions at about 0.7～1.8 GPa, 8.6 GPa and 1.6 GPa, 8.3 GPa, respectively, and two crystal structure transitions at about 2 GPa, above 8.6 GPa and about 1.6 GPa, above 8.3 GPa, respectively. In the present work, the p-V relationship for Hg1-xCdxTe (x=0.19, 0.22) at room temperature and up to 4.5 GPa has been studied using the piston-cylinder type measurement device for the p-V relationship. The experimental results indicate that the phase transition in Hg1-xCdxTe (x=0.19, 0.22) occurs at about 2.1 GPa. Its equations of state before and after the phase transition have been given.